ZHCSIS5B
May 2018 – January 2024
ESDS302
,
ESDS304
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings - JEDEC Specifications
5.3
ESD Ratings - IEC Specifications
5.4
Recommended Operating Conditions
5.5
Thermal Information
5.6
Electrical Characteristics
5.7
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.4
Device Functional Modes
7
Application and Implementation
7.1
Application Information
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.2.1
Signal Range
7.2.2.2
Operating Frequency
7.2.3
Application Curves
7.3
Power Supply Recommendations
7.4
Layout
7.4.1
Layout Guidelines
7.4.2
Layout Examples
8
Device and Documentation Support
8.1
接收文档更新通知
8.2
支持资源
8.3
Trademarks
8.4
静电放电警告
8.5
术语表
9
Revision History
10
Mechanical, Packaging, and Orderable Information
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
DBV|5
散热焊盘机械数据 (封装 | 引脚)
订购信息
zhcsis5b_oa
zhcsis5b_pm
5.7
Typical Characteristics
Figure 5-1
Surge Clamping Voltage vs. Peak Pulse Current (IEC 61000-4-5, tp = 8/20µs), Any IO Pin to GND
Figure 5-3
Surge Current, Clamping Voltage and Power Waveform (IEC-61000-4-5, t
p
= 8/20µs), Any IO Pin to GND
Figure 5-5
TLP I-V Curve, IO to GND, t
p
= 100ns
Figure 5-7
+8kV IEC 61000-4-2 Clamping Voltage Waveform, IO Pin to GND
Figure 5-9
DC Leakage Current vs. Ambient Temperature, Bias Voltage = 3.6V
Figure 5-11
Surge Power Derating with Respect to Ambient Temperature
Figure 5-2
Surge Clamping Voltage vs. Peak Pulse Current (IEC 61000-4-5, tp = 8/20µs), GND to IO Pin
Figure 5-4
DC I-V Curve
Figure 5-6
TLP I-V Curve, IO to GND Negative, t
p
= 100ns
Figure 5-8
-8kV IEC 61000-4-2 Clamping Voltage Waveform, IO Pin to GND
Figure 5-10
Capacitance vs. Bias Voltage at 25°C
Figure 5-12
Differential Insertion Loss vs. Frequency