ZHCSET3A November   2015  – December 2015 DS90CR286AT-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LVDS Receivers
        1. 7.3.1.1 Input Termination
      2. 7.3.2 Phase Locked Loop (PLL)
      3. 7.3.3 Serial LVDS-to-Parallel LVCMOS Converter
      4. 7.3.4 LVCMOS Drivers
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Down Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Bit Resolution and Operating Frequency Compatibility
        2. 8.2.2.2 Data Mapping between Receiver and Endpoint Panel Display
        3. 8.2.2.3 RSKM Interoperability
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply Voltage (VCC) −0.3 4 V
LVCMOS Output Voltage −0.3 (VCC + 0.3) V
LVDS Receiver Input Voltage −0.3 (VCC + 0.3) V
Operating Junction Temperature 150 °C
Lead Temperature (Soldering, 4 sec) 260 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply Voltage (VCC) 3.0 3.3 3.6 V
Operating Free Air Temperature (TA) −40 25 105 °C
Receiver Input Range  0 2.4 V
Supply Noise Voltage (VNoise) 100 mVp-p

6.4 Thermal Information

THERMAL METRIC(1) DS90CR286AT-Q1 UNIT
DGG (TSSOP)
56 PINS
RθJA Junction-to-ambient thermal resistance 64.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 20.6
RθJB Junction-to-board thermal resistance 33.3
ψJT Junction-to-top characterization parameter 1.0
ψJB Junction-to-board characterization parameter 33.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics(1)(2)

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LVCMOS DC SPECIFICATIONS (For PWR DWN Pin)
VIH High Level Input Voltage 2.0 VCC V
VIL Low Level Input Voltage GND 0.8 V
VCL Input Clamp Voltage ICL = −18 mA −0.79 −1.5 V
IIN Input Current VIN = 0.4 V, 2.5 V or VCC +1.8 +10 μA
V IN = GND −10 0 μA
LVCMOS DC SPECIFICATIONS
VOH High Level Output Voltage IOH = −0.4 mA 2.7 3.3 V
VOL Low Level Output Voltage IOL = 2 mA 0.06 0.3 V
IOS Output Short Circuit Current VOUT = 0 V −60 −120 mA
LVDS RECEIVER DC SPECIFICATIONS
VTH Differential Input High Threshold VCM = 1.2 V +100 mV
VTL Differential Input Low Threshold VCM = 1.2 V −100 mV
IIN Input Current VIN = 2.4 V, VCC = 3.6 V ±10 μA
VIN = 0V , VCC = 3.6 V ±10 μA
ICCRW Receiver Supply Current Worst Case CL = 8 pF, Worst Case Pattern, DS90CR286AT-Q1 (Figure 1 Figure 2), TA=−40°C to 105°C f = 33 MHz 49 65 mA
f = 40 MHz 53 70 mA
f = 66 MHz 81 105 mA
ICCRZ Receiver Supply Current Power Down PWR DWN = Low; Receiver Outputs Stay Low during Power Down Mode 10 55 μA
(1) Typical values are given for VCC = 3.3 V and TA = 25ºC.
(2) Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise specified (except VOD and ΔV OD).

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CLHT LVCMOS Low-to-High Transition Time (Figure 2) 2 5 ns
CHLT LVCMOS High-to-Low Transition Time (Figure 2) 1.8 5 ns
RSPos0 Receiver Input Strobe Position for Bit 0 (Figure 8) f = 40 MHz, T = 25ºC 1.01 1.4 2.45 ns
RSPos1 Receiver Input Strobe Position for Bit 1 4.52 5.0 5.99 ns
RSPos2 Receiver Input Strobe Position for Bit 2 8.08 8.5 9.35 ns
RSPos3 Receiver Input Strobe Position for Bit 3 11.59 11.9 12.89 ns
RSPos4 Receiver Input Strobe Position for Bit 4 15.15 15.6 16.53 ns
RSPos5 Receiver Input Strobe Position for Bit 5 18.86 19.2 20.20 ns
RSPos6 Receiver Input Strobe Position for Bit 6 22.34 22.9 23.91 ns
RSPos0 Receiver Input Strobe Position for Bit 0 (Figure 8) f = 66 MHz, T = -40ºC 0.58 1.1 1.55 ns
RSPos1 Receiver Input Strobe Position for Bit 1 2.77 3.3 3.80 ns
RSPos2 Receiver Input Strobe Position for Bit 2 5.01 5.4 5.77 ns
RSPos3 Receiver Input Strobe Position for Bit 3 7.11 7.5 7.88 ns
RSPos4 Receiver Input Strobe Position for Bit 4 9.24 9.7 10.12 ns
RSPos5 Receiver Input Strobe Position for Bit 5 11.44 11.9 12.32 ns
RSPos6 Receiver Input Strobe Position for Bit 6 13.62 14.1 14.50 ns
RSPos0 Receiver Input Strobe Position for Bit 0 (Figure 8) f = 66 MHz, T = 25ºC 0.68 1.2 1.64 ns
RSPos1 Receiver Input Strobe Position for Bit 1 2.88 3.4 3.88 ns
RSPos2 Receiver Input Strobe Position for Bit 2 5.08 5.5 5.87 ns
RSPos3 Receiver Input Strobe Position for Bit 3 7.20 7.6 7.98 ns
RSPos4 Receiver Input Strobe Position for Bit 4 9.30 9.7 10.24 ns
RSPos5 Receiver Input Strobe Position for Bit 5 11.50 12.0 12.40 ns
RSPos6 Receiver Input Strobe Position for Bit 6 13.70 14.2 14.57 ns
RSPos0 Receiver Input Strobe Position for Bit 0 (Figure 8) f = 66 MHz, T = 105ºC 0.84 1.3 1.74 ns
RSPos1 Receiver Input Strobe Position for Bit 1 3.00 3.6 4.05 ns
RSPos2 Receiver Input Strobe Position for Bit 2 5.14 5.6 6.02 ns
RSPos3 Receiver Input Strobe Position for Bit 3 7.30 7.8 8.14 ns
RSPos4 Receiver Input Strobe Position for Bit 4 9.42 9.9 10.40 ns
RSPos5 Receiver Input Strobe Position for Bit 5 11.59 12.1 12.57 ns
RSPos6 Receiver Input Strobe Position for Bit 6 13.83 14.3 14.73 ns
RCOP RxCLK OUT Period (Figure 3) 15 50 ns
RCOH RxCLK OUT High Time (Figure 3) f = 40 MHz 10.0 12.2 ns
RCOL RxCLK OUT Low Time (Figure 3) 10.0 11.0 ns
RSRC RxOUT Setup to RxCLK OUT (Figure 3) 6.5 11.6 ns
RHRC RxOUT Hold to RxCLK OUT (Figure 3) 6.0 11.6 ns
RCOH RxCLK OUT High Time (Figure 3) f = 66 MHz 5.0 7.6 ns
RCOL RxCLK OUT Low Time (Figure 3) 5.0 6.3 ns
RSRC RxOUT Setup to RxCLK OUT (Figure 3) 4.5 7.3 ns
RHRC RxOUT Hold to RxCLK OUT (Figure 3) 4.0 6.3 ns
RCCD RxCLK IN to RxCLK OUT Delay at 25°C, VCC = 3.3V(1) (Figure 4) 3.5 5.0 7.5 ns
RPLLS Receiver Phase Lock Loop Set (Figure 5) 10 ms
RPDD Receiver Power Down Delay (Figure 7) 1 μs
(1) Total latency for the channel link chipset is a function of clock period and gate delays through the transmitter (TCCD) and receiver (RCCD). The total latency for the DS90CR285 transmitter and DS90CR286AT-Q1 receiver is: (T + TCCD) + (2*T + RCCD), where T = Clock period. If another transmitter is used, the alternative transmitter's TCCD must be used to calculate total latency.
DS90CR286AT-Q1 10087302.png Figure 1. "Worst Case" Test Pattern
DS90CR286AT-Q1 10087304.gif Figure 2. LVCMOS Output Load and Transition Times
DS90CR286AT-Q1 10087305.png Figure 3. Setup/Hold and High/Low Times
DS90CR286AT-Q1 10087306.png Figure 4. Clock In to Clock Out Delay
DS90CR286AT-Q1 10087307.png Figure 5. Phase Lock Loop Set Time
DS90CR286AT-Q1 ds90cr286atq_mapping.gif Figure 6. Mapping of 28 LVCMOS Parallel Data to 4D + C LVDS Serialized Data
DS90CR286AT-Q1 10087308.png Figure 7. Power Down Delay
DS90CR286AT-Q1 10087325.png Figure 8. LVDS Input Strobe Position

6.7 Typical Characteristics

DS90CR286AT-Q1 C001_SNLS498_Rspos0.png Figure 9. Rx Strobe Position 0 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C003_SNLS498_Rspos2.png Figure 11. Rx Strobe Position 2 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C005_SNLS498_Rspos4.png Figure 13. Rx Strobe Position 4 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C007_SNLS498_Rspos6.png Figure 15. Rx Strobe Position 6 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C002_SNLS498_Rspos1.png Figure 10. Rx Strobe Position 1 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C004_SNLS498_Rspos3.png Figure 12. Rx Strobe Position 3 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 C006_SNLS498_Rspos5.png Figure 14. Rx Strobe Position 5 versus Temperature
Operating Frequency: 66 MHz
DS90CR286AT-Q1 Typ_RxOUT_v_RxCLKOUT_66_MHz.gif Figure 16. Parallel PRBS-7 on LVCMOS Outputs at 66 MHz
DS90CR286AT-Q1 RxOUT_Setup_to_RxCLKOUT_Time_66_MHz.gif Figure 18. Typical RxOUT Setup Time at 66 MHz
(RSRC = 7.1 ns)
DS90CR286AT-Q1 Typ_RxOUT_Strobe_66_MHz.gif Figure 17. Typical RxOUT Timing Diagram at 66 MHz
DS90CR286AT-Q1 RxOUT_Hold_to_RxCLKOUT_Time_66_MHz.gif Figure 19. Typical RxOUT Hold Time at 66 MHz
(RHRC = 7.0 ns)