ZHCSDD3 December   2014 DRV5053-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 输出状态
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Magnetic Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Field Direction Definition
      2. 8.3.2 Device Output
      3. 8.3.3 Power-On Time
      4. 8.3.4 Output Stage
      5. 8.3.5 Protection Circuits
        1. 8.3.5.1 Overcurrent Protection (OCP)
        2. 8.3.5.2 Load Dump Protection
        3. 8.3.5.3 Reverse Supply Protection
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application With No Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Filtered Typical Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
      2. 11.1.2 器件标记
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage VCC –22(2) 40 V
Voltage ramp rate (VCC), VCC < 5 V Unlimited V/µs
Voltage ramp rate (VCC), VCC > 5 V 0 2
Output pin voltage OUT –0.5 2.5 V
Output pin reverse current during reverse supply condition OUT 0 –20 mA
Operating junction temperature, TJ Q, see Figure 17 –40 150(3) °C
E, see Figure 17 –40 175(4)
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Ensured by design. Only tested to –20 V.
(3) Tested in production to TA = 125°C.
(4) Tested in production to TA = 150°C.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power supply voltage 2.7 38 V
VOUT Output pin voltage (OUT) 0 2 V
ISOURCE Output pin current source (OUT) 0 300 µA
ISINK Output pin current sink (OUT) 0 2.3 mA
TA Operating ambient temperature Q, see Figure 17 –40 125 °C
E, see Figure 17 –40 150

7.4 Thermal Information

THERMAL METRIC(1) DRV5053-Q1 UNIT
DBZ LPG
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 333.2 180 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.9 98.6
RθJB Junction-to-board thermal resistance 66.9 154.9
ψJT Junction-to-top characterization parameter 4.9 40
ψJB Junction-to-board characterization parameter 65.2 154.9
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VCC)
VCC VCC operating voltage 2.7 38 V
ICC Operating supply current VCC = 2.7 to 38 V, TA = 25°C 2.7 mA
VCC = 2.7 to 38 V, TA = TA, MAX(1) 3 3.6
ton Power-on time 35 50 µs
PROTECTION CIRCUITS
VCCR Reverse supply voltage –22 V
IOCP,SOURCE Overcurrent protection level Sourcing current 300 µA
IOCP,SINK Overcurrent protection level Sinking current 2.3 mA
(1) TA, MAX is 125°C for Q Grade 1 devices and 150°C for E Grade 0 devices (see Figure 17)

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG OUTPUT (OUT)
td Output delay time TA = 25°C 13 25 µs

7.7 Magnetic Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT(2)
VQ Quiescent output B = 0 mT
 0.9 1.02 1.15 V
ƒBW Bandwidth(3) 20 kHz
BN Input-referred noise(1) COUT = 50 pF
 0.40 0.58 0.79 mTpp
Le Linearity(4) –BSAT < B < BSAT 1%
VOUT MIN Output saturation voltage (min) B < –BSAT 0.2 V
VOUT MAX Output saturation voltage (max) B > BSAT 1.8 V
DRV5053OA: –11 mV/mT
S Sensitivity VCC = 3.3 V
 –17.5 –11 –5 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 6 mVpp
BSAT Input saturation field VCC = 3.3 V
 73 mT
DRV5053PA: –23 mV/mT
S Sensitivity VCC = 3.3 V
 –35 –23 –10 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 13 mVpp
BSAT Input saturation field VCC = 3.3 V
 35 mT
DRV5053RA: –45 mV/mT
S Sensitivity VCC = 3.3 V
 –70 –45 –20 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 26 mVpp
BSAT Input saturation field VCC = 3.3 V
 18 mT
DRV5053VA: –90 mV/mT
S Sensitivity VCC = 3.3 V
 –140 –90 –45 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 52 mVpp
BSAT Input saturation field VCC = 3.3 V
 9 mT
DRV5053CA: 23 mV/mT
S Sensitivity VCC = 3.3 V
 10 23 35 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 13 mVpp
BSAT Input saturation field VCC = 3.3 V
 35 mT
DRV5053EA: 45 mV/mT
S Sensitivity VCC = 3.3 V
 20 45 70 mV/mT
VN Output-referred noise(1) VCC = 3.3 V; ROUT = 10 kΩ;
COUT = 50 pF
 26 mVpp
BSAT Input saturation field VCC = 3.3 V
 18 mT
(1) Not tested in production; limits are based on characterization data.
(2) 1 mT = 10 Gauss
(3) Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.
(4) Linearity describes the change in sensitivity across the B-range. The sensitivity near BSAT is typically within 1% of the sensitivity near
B = 0.

7.8 Typical Characteristics

TA > 125°C data is valid for Grade 0 devices only (E, see Figure 17)
DRV5053-Q1 D009_SLIS162.gif
Figure 1. ICC vs VCC
DRV5053-Q1 D001_SLIS154.gif
TA = 25°C
Figure 3. Sensitivity vs VCC
DRV5053-Q1 D003_SLIS154.gif
TA = 25°C
Figure 5. DRV5053-Q1AD, VQ vs VCC
DRV5053-Q1 D010_SLIS162.gif
Figure 2. ICC vs Temperature
DRV5053-Q1 D002_SLIS154.gif
VCC = 3.3 V
Figure 4. Sensitivity vs Temperature
DRV5053-Q1 D004_SLIS154.gif
VCC = 3.3 V
Figure 6. DRV5053-Q1AD, BN vs Temperature