ZHCSTJ0 October 2023 DLP651LE
PRODUCTION DATA
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VOLTAGE SUPPLY | |||||
| VCC | Supply voltage for LVCMOS core logic(1) | 3.0 | 3.3 | 3.6 | V |
| VCCI | Supply voltage for LVDS Interface(1) | 3.0 | 3.3 | 3.6 | V |
| VOFFSET | Micromirror Electrode and HVCMOS voltage(1)(2) | 8.25 | 8.5 | 8.75 | V |
| VMBRST | Micromirror Bias / Reset Voltage(1) | –27 | 26.5 | V | |
| |VCC – VCCI| | Supply voltage delta (absolute value)(3) | 0 | 0.3 | V | |
| LVCMOS INTERFACE | |||||
| VIH | Input High Voltage | 1.7 | 2.5 | VCC + 0.3 | V |
| VIL | Input Low Voltage | –0.3 | 0.7 | V | |
| IOH | High Level Output Current | –20 | mA | ||
| IOL | Low Level Output Current | 15 | mA | ||
| tPWRDNZ | PWRDNZ pulse width(4) | 10 | ns | ||
| SCP INTERFACE | |||||
| ƒSCPCLK | SCP clock frequency(5) | 50 | 500 | kHz | |
| tSCP_PD | Propagation delay, clock to Q, from rising-edge of SCPCLK to valid SCPDO(6) | 0 | 900 | ns | |
| tSCP_DS | SCPDI clock setup time (before SCPCLK falling-edge)(6) | 800 | ns | ||
| tSCP_DH | SCPDI hold time (after SCPCLK falling-edge)(6) | 900 | ns | ||
| tSCP_NEG_ENZ | Time between falling-edge of SCPENZ and the rising-edge of SCPCLK(5) | 1 | us | ||
| SCP_POS_ENZ | Time between falling-edge of SCPCLK and the rising-edge of SCPENZ | 1 | us | ||
| tSCP_OUT_EN | Time required for SCP output buffer to recover after SCPENZ (from tristate) | 192/ƒDCLK | s | ||
| tSCP_PW_ENZ | SCPENZ inactive pulse width (high level) | 1 | 1/ƒscpclk | ||
| tr | Rise time (20% to 80%) | 200 | ns | ||
| tf | Fall time (80% to 20%) | 200 | ns | ||
| LVDS INTERFACE | |||||
| ƒCLOCK | Clock frequency for LVDS interface (all channels), DCLK(7) | 320 | 330 | MHz | |
| |VID| | Input differential voltage (absolute value)(8) | 100 | 400 | 600 | mV |
| VCM | Common mode voltage(8) | 1200 | mV | ||
| VLVDS | LVDS voltage(8) | 0 | 2000 | mV | |
| tLVDS_RSTZ | Time required for LVDS receivers to recover from PWRDNZ | 10 | ns | ||
| ZIN | Internal differential termination resistance | 95 | 105 | Ω | |
| ZLINE | Line differential impedance (PWB/trace) | 90 | 100 | 110 | Ω |
| ENVIRONMENTAL | |||||
| TARRAY | Array temperature, long-term operational(9)(10)(11) | 10 | 40 to 70(12) | °C | |
| Array temperature, short-term operational(10)(13) | 0 | 10 | °C | ||
| TDP -AVG | Average dew point average temperature (non-condensing)(14) | 28 | °C | ||
| TDP-ELR | Elevated dew point temperature range (non-condensing)(15) | 28 | 36 | °C | |
| CTELR | Cumulative time in elevated dew point temperature range | 24 | Months | ||
| QAP-ILL | Window aperture illumination overfill (16) | 17 | W/cm2 | ||
| SOLID STATE ILLUMINATION | |||||
| ILLUV | Illumination power at wavelengths < 410 nm(9) (18) | 10 | mW/cm2 | ||
| ILLVIS | Illumination power at wavelengths ≥ 410 nm and ≤800 nm (17)(18) | 33.5 | W/cm2 | ||
| ILLIR | Illumination power at wavelengths > 800 nm (18) | 10 | mW/cm2 | ||
| ILLBLU | Illumination power at wavelengths ≥ 410 nm and ≤ 475 nm (17)(18) | 10.6 | W/cm2 | ||
| ILLBLU1 | Illumination power at wavelengths ≥ 410 nm and ≤ 440 nm (17)(18) | 1.7 | W/cm2 | ||
| LAMP ILLUMINATION | |||||
| ILLUV | Illumination power at wavelengths < 395 nm(9) (18) | 2 | mW/cm2 | ||
| ILLVIS | Illumination power at wavelengths ≥ 395 nm and ≤ 800 nm (17)(18) | 23.5 | W/cm2 | ||
| ILLIR | Illumination power at wavelengths > 800 nm (18) | 10 | mW/cm2 | ||
Figure 6-1 Maximum Recommended Array
Temperature—Derating Curve
Figure 6-2 Illumination Overfill
Diagram—Critical Area