ZHCSB78C June 2014 – March 2015 CSD95372AQ5M
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN to PGND | –0.3 | 25 | V | |
| VSW to PGND | –0.3 | 25 | V | |
| VSW to PGND (<10 ns) | –7 | 27 | V | |
| VDD to PGND | –0.3 | 7 | V | |
| ENABLE, PWM, FCCM, TAO to PGND(2) | –0.3 | VDD + 0.3 | V | |
| BOOT to BOOT_R(2) | –0.3 | VDD + 0.3 | V | |
| PD, Power Dissipation | 12 | W | ||
| TJ, Operating Temperature Range | –55 | 150 | °C | |
| Tstg, Storage Temperature Range | –55 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| ESD Rating | Human Body Model (HBM) | ±2000 | V | |
| Charged Device Model (CDM) | ±500 | |||
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VDD | Gate Drive Voltage | 4.5 | 5.5 | V | |
| VIN | Input Supply Voltage | 16 | V | ||
| VOUT | Output Voltage | 5.5 | V | ||
| IOUT | Continuous Output Current | VIN = 12 V, VDD = 5 V, VOUT = 1.8 V, ƒSW = 500 kHz, LOUT = 0.22 µH(1) |
60 | A | |
| IOUT-PK | Peak Output Current(2) | 90 | A | ||
| ƒSW | Switching Frequency | CBST = 0.1 µF (min) | 2000 | kHz | |
| On Time Duty Cycle | ƒSW = 1 MHz | 85 | % | ||
| Minimum PWM On Time | 20 | ns | |||
| Operating Temperature | –40 | 125 | °C | ||
| THERMAL METRIC | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJC | Junction-to-Case Thermal Resistance (Top of package)(1) | 15 | °C/W | ||
| RθJB | Junction-to-Board Thermal Resistance(2) | 2 | |||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| PLOSS | ||||||
| Power Loss(1) | VIN = 12 V, VDD = 5 V, VOUT = 1.2 V, IOUT = 30 A, ƒSW = 500 kHz, LOUT = 0.22 µH , TJ = 25°C |
3.3 | W | |||
| Power Loss(2) | VIN = 12 V, VDD = 5 V, VOUT = 1.2 V, IOUT = 30 A, ƒSW = 500 kHz, LOUT = 0.22 µH , TJ = 125°C |
3.9 | W | |||
| VIN | ||||||
| IQ | VIN Quiescent Current | ENABLE = 0, VDD = 5 V | 10 | µA | ||
| VDD | ||||||
| IDD | Standby Supply Current | ENABLE = 0, PWM = 0 | 250 | µA | ||
| IDD | Operating Supply Current | ENABLE = 5 V, PWM = 50% Duty cycle, ƒSW = 500 kHz |
23 | mA | ||
| POWER-ON RESET AND UNDERVOLTAGE LOCKOUT | ||||||
| VDD Rising | Power-On Reset | 3.9 | V | |||
| VDD Falling | UVLO | 3.4 | V | |||
| Hysteresis | 100 | 250 | mV | |||
| Startup Delay(3) | ENABLE = 5 V | 6 | µs | |||
| ENABLE | ||||||
| VIH | Logic Level High | Schmitt Trigger Input See Figure 11 |
2.0 | V | ||
| VIL | Logic Level Low | 0.8 | V | |||
| Weak Pulldown Impedance | 100 | kΩ | ||||
| tPDH | Rising Propagation Delay | 3 | µs | |||
| tPDL | Falling Propagation Delay | 30 | ns | |||
| FCCM | ||||||
| VIH | Logic Level High | Schmitt Trigger Input See Figure 13 and Figure 14 |
2.0 | V | ||
| VIL | Logic Level Low | 0.8 | V | |||
| Weak Pullup Current | 5 | µA | ||||
| THERMAL SHUTDOWN(2) | ||||||
| Start Threshold | 150 | 165 | °C | |||
| Temperature Hysteresis | 25 | °C | ||||
| PWM | ||||||
| IPWMH | PWM = 5 V | 500 | µA | |||
| IPWML | PWM = 0 | –500 | µA | |||
| VPWMH | PWM Logic Level High | CPWM = 10 pF | 2.3 | 2.5 | 2.7 | V |
| VPWML | PWM Logic Level Low | 0.7 | 0.9 | 1.1 | V | |
| PWM Tri-State Open Voltage | 1.5 | V | ||||
| tPDLH and tPDHL | PWM to VSW Propagation Delay(2) | 50 | ns | |||
| t3HT | Tri-State Shutdown Hold-off Time (2) | 30 | ns | |||
| t3SD | Tri-State Shutdown Propagation Delay(2) | 80 | 160 | ns | ||
| t3RD | Tri-State Recovery Propagation Delay(2) | 50 | 80 | ns | ||
| tDEM | Diode Emulation Minimum On Time(2) | 150 | ns | |||
| BOOTSTRAP SWITCH | ||||||
| VFBOOT | Forward Voltage | Measured from VDD to VBOOT, IF = 10 mA | 200 | 360 | mV | |
| IRBOOT | Reverse Leakage(1) | VBOOT – VDD = 20 V | 0.15 | 1 | µA | |
| ZERO CROSSING COMPARATOR | ||||||
| LS FET Turn-off Current | Diode Emulation Mode Enabled VOUT = 1.8 V, L = 150 nH |
0 | 1.125 | A | ||
| THERMAL ANALOG OUTPUT TAO | ||||||
| Output Voltage at 25°C | 0.56 | 0.60 | 0.64 | V | ||
| Output Voltage Temperature Coefficient | 8 | mV/°C | ||||








