ZHCSG79C April   2017  – April 2018 CSD88599Q5DC

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 6.7.1 Operating Conditions
      2. 6.7.2 Calculating Power Loss
      3. 6.7.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  8. 8器件和文档支持
    1. 8.1 接收文档更新通知
    2. 8.2 社区资源
    3. 8.3 商标
    4. 8.4 静电放电警告
    5. 8.5 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 Q5DC 封装尺寸
    2. 9.2 焊盘图案建议
    3. 9.3 模版建议

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DMM|22
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Absolute Maximum Ratings(1)

TJ = 25°C (unless otherwise noted)
PARAMETER CONDITIONS MIN MAX UNIT
Voltage VIN to PGND –0.8 60 V
VSW to PGND –0.3 60
GH to SH –20 20
GL to PGND –20 20
Pulsed current rating, IDM(2) 400 A
Power dissipation, PD 12 W
Avalanche energy, EAS High-side FET, ID = 95 A, L = 0.1 mH 448 mJ
Low-side FET, ID = 95 A, L = 0.1 mH 448
Operating junction temperature, TJ –55 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Single FET conduction, max RθJC = 1.1°C/W, pulse duration ≤ 100 μs, single pulse.