ZHCSG79C April   2017  – April 2018 CSD88599Q5DC

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 6.7.1 Operating Conditions
      2. 6.7.2 Calculating Power Loss
      3. 6.7.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  8. 8器件和文档支持
    1. 8.1 接收文档更新通知
    2. 8.2 社区资源
    3. 8.3 商标
    4. 8.4 静电放电警告
    5. 8.5 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 Q5DC 封装尺寸
    2. 9.2 焊盘图案建议
    3. 9.3 模版建议

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DMM|22
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1.4 2.0 2.5 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, IDS = 30 A 2.5 3.3 mΩ
VGS = 10 V, IDS = 30 A 1.7 2.1
gfs Transconductance VDS = 6 V, IDS = 30 A 130 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0V, VDS = 30 V,
ƒ = 1 MHz		 3720 4840 pF
COSS Output capacitance 670 870 pF
CRSS Reverse transfer capacitance 12 16 pF
RG Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5 V) VDS = 30 V,
IDS = 30 A		 21 27 nC
Qg Gate charge total (10 V) 43 56 nC
Qgd Gate charge gate-to-drain 7.0 nC
Qgs Gate charge gate-to-source 10.1 nC
Qg(th) Gate charge at Vth 6.3 nC
QOSS Output charge VDS = 30 V, VGS = 0 V 100 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		 9 ns
tr Rise time 20 ns
td(off) Turnoff delay time 23 ns
tf Fall time 3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 30 A, VGS = 0 V 0.8 1.0 V
Qrr Reverse recovery charge VDS = 30 V, IF = 30 A,
di/dt = 300 A/µs		 172 nC
trr Reverse recovery time 36 ns

CSD88599Q5DC MaxBoard.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD88599Q5DC MinBoard.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.