ZHCSBM7F September   2013  – February 2022 CSD25481F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 支持资源
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = –250 μA–20V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = –16 V–100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = –12 V–50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = –250 μA–0.7–0.95–1.2V
RDS(on)Drain-to-Source On-ResistanceVGS = –1.8 V, IDS = –0.1 A395800mΩ
VGS = –2.5 V, IDS = –0.5 A145174mΩ
VGS = –4.5 V, IDS = –0.5 A90105mΩ
VGS = –8 V, IDS = –0.5 A7588mΩ
gfsTransconductanceVDS = –10 V, IDS = –0.5 A3.3S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = –10 V,
ƒ = 1 MHz		189pF
CossOutput Capacitance78pF
CrssReverse Transfer Capacitance5.5pF
RGSeries Gate Resistance20Ω
QgGate Charge Total (4.5 V)VDS = –10 V, IDS = –0.5 A913pC
QgdGate Charge Gate-to-Drain153pC
QgsGate Charge Gate-to-Source240pC
Qg(th)Gate Charge at Vth116pC
QossOutput ChargeVDS = –10 V, VGS = 0 V1030pC
td(on)Turn On Delay TimeVDS = –10 V, VGS = –4.5 V,
IDS = –0.5 A,RG = 2 Ω		4.1ns
trRise Time3.6ns
td(off)Turn Off Delay Time16.9ns
tfFall Time6.7ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = –0.5 A, VGS = 0 V–0.75V
QrrReverse Recovery ChargeVDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs1010pC
trrReverse Recovery Time7.5ns