ZHCSBM7F September   2013  – February 2022 CSD25481F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 支持资源
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

GUID-3D5BD281-872B-4796-B065-F6F0E71250D1-low.gifFigure 5-1 Transient Thermal Impedance
GUID-263E963E-CB9F-44E9-99B9-E746D2E702D6-low.pngFigure 5-2 Saturation Characteristics
GUID-2A1AF4DA-E9C6-4D80-B52B-FA8E2D6FE2A7-low.pngFigure 5-3 Transfer Characteristics
GUID-DFA459EB-497F-432F-B799-EA1D42B1DA47-low.pngFigure 5-4 Gate Charge
GUID-1892E015-3AF6-468A-8D4D-7EC6F8950F87-low.pngFigure 5-6 Threshold Voltage vs Temperature
GUID-81CADFAB-0B7D-4F2A-BDD2-5953BC61A887-low.pngFigure 5-8 Normalized On-State Resistance vs Temperature
GUID-02D08A03-213D-44D2-B461-370F8D2C55E3-low.gif
Single Pulse Typical RθJA =250°C/W (min Cu)
Figure 5-10 Maximum Safe Operating Area
GUID-8EB93F01-1A01-4F90-A23F-31D1694F3E59-low.pngFigure 5-5 Capacitance
GUID-C09F85AF-86AB-44E5-93C5-34C8646D4F47-low.pngFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-30C7FD61-BFF6-4AE3-AF60-5143738EB43F-low.pngFigure 5-9 Typical Diode Forward Voltage
GUID-94B9022F-9AD2-479F-8266-6F950806FA1C-low.gif
Typical RθJA = 90°C/W (max Cu)
Figure 5-11 Maximum Drain Current vs Temperature