ZHCSBW7B December 2013 – April 2024 CSD19503KCS
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 80 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 64V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 2.2 | 2.8 | 3.4 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 6V, ID = 60A | 8.8 | 10.9 | mΩ | ||
| VGS = 10V, ID = 60A | 7.6 | 9.2 | mΩ | ||||
| gfs | Transconductance | VDS = 8V, ID = 60A | 110 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 40V, ƒ = 1MHz | 2100 | 2730 | pF | ||
| Coss | Output Capacitance | 555 | 721 | pF | |||
| Crss | Reverse Transfer Capacitance | 8.5 | 11.1 | pF | |||
| RG | Series Gate Resistance | 1.2 | 2.4 | Ω | |||
| Qg | Gate Charge Total (10V) | VDS = 40V, ID = 60A | 28 | 36 | nC | ||
| Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 9.8 | nC | ||||
| Qg(th) | Gate Charge at Vth | 6.1 | nC | ||||
| Qoss | Output Charge | VDS = 40V, VGS = 0V | 71 | nC | |||
| td(on) | Turn On Delay Time | VDS =
40V, VGS = 10V, IDS = 60A, RG = 0Ω | 7 | ns | |||
| tr | Rise Time | 3 | ns | ||||
| td(off) | Turn Off Delay Time | 11 | ns | ||||
| tf | Fall Time | 2 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 60A, VGS = 0V | 0.9 | 1.1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
40V, IF = 60A, di/dt = 300A/μs | 119 | nC | |||
| trr | Reverse Recovery Time | 72 | ns | ||||