ZHCSF08B May   2016  – February 2022 CSD18541F5

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA60V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 48 V1µA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 20 V10µA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA1.41.752.2V
RDS(on)Drain-to-source on-resistanceVGS = 4.5 V, IDS = 1 A5775mΩ
VGS = 10 V, IDS = 1 A5465
gfsTransconductanceVDS = 6 V, IDS = 1 A7.7S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 30 V,
ƒ = 1 MHz
598777pF
CossOutput capacitance4761pF
CrssReverse transfer capacitance8.110.5pF
RGSeries gate resistance12001600
QgGate charge total (10 V)VDS = 30 V, IDS = 1 A1114nC
QgdGate charge gate-to-drain1.6nC
QgsGate charge gate-to-source1.5nC
Qg(th)Gate charge at Vth0.8nC
QossOutput chargeVDS = 30 V, VGS = 0 V3.2nC
td(on)Turnon delay timeVDS = 30 V, VGS = 4.5 V,
IDS = 1 A, RG = 0 Ω
572ns
trRise time540ns
td(off)Turnoff delay time1076ns
tfFall time496ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 1 A, VGS = 0 V0.81V