ZHCSBA6B 数据表 | 德州仪器 TI.com.cn

ZHCSBA6B March 2015 – April 2024 CSD18537NKCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 48V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	2.6	3	3.5	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6V, I_D = 25A		14	18	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 25A		11	14	mΩ
g_ƒs	Transconductance	V_DS = 30V, I_D = 25A		100		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 30V, ƒ = 1MHz		1140	1480	pF
C_oss	Output Capacitance			136	177	pF
C_rss	Reverse Transfer Capacitance			4.0	5.2	pF
R_G	Series Gate Resistance			5.5	11	Ω
Q_g	Gate Charge Total (10V)	V_DS = 30V, I_D = 25A		14	18	nC
Q_gd	Gate Charge Gate-to-Drain			2.3		nC
Q_gs	Gate Charge Gate-to-Source			5.2		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 30V, V_GS = 0V		25		nC
t_d(on)	Turn On Delay Time	V_DS = 30V, V_GS = 10V, I_DS = 25A, R_G = 0Ω		4.5		ns
t_r	Rise Time			3.2		ns
t_d(off)	Turn Off Delay Time			12.6		ns
t_ƒ	Fall Time			3.9		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 25A, V_GS = 0V		0.9	1	V
Q_rr	Reverse Recovery Charge	V_DS= 30V, I_F = 25A, di/dt = 300A/μs		77		nC
t_rr	Reverse Recovery Time	V_DS= 30V, I_F = 25A, di/dt = 300A/μs		50		ns