ZHCSB81C 数据表 | 德州仪器 TI.com.cn

ZHCSB81C June 2013 – February 2018 CSD18532NQ5B

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C unless otherwise stated

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 25 A

V_DS = 30 V

Figure 4. Gate Charge

I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

I_D = 25 A

Figure 8. Normalized On-State Resistance vs Temperature

Single pulse, max R_θJC = 0.8°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching