ZHCSB81C June   2013  – February 2018 CSD18532NQ5B

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q5B 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模板布局
    4. 7.4 Q5B 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DNK|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.4 2.8 3.4 V
RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 25 A 3.5 4.4 mΩ
VGS = 10 V, ID = 25 A 2.7 3.4
gfs Transconductance VDS = 30 V, ID = 25 A 140 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 4100 5340 pF
Coss Output capacitance 495 644 pF
Crss Reverse transfer capacitance 16 21 pF
RG Series gate resistance 1.2 2.4 Ω
Qg Gate charge total (10 V) VDS = 30 V, ID = 25 A 49 64 nC
Qgd Gate charge gate-to-drain 7.9 nC
Qgs Gate charge gate-to-source 16 nC
Qg(th) Gate charge at Vth 11 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 69 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 25 A, RG = 0 Ω		 8.2 ns
tr Rise time 8.7 ns
td(off) Turnoff delay time 20 ns
tf Fall time 2.7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 25 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS = 30 V, IF = 25 A,
di/dt = 300 A/μs		 139 nC
trr Reverse recovery time 64 ns