ZHCSAG5A November   2012  – September 2014 CSD17559Q5

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械封装和可订购信息
    1. 7.1 Q5 封装尺寸
    2. 7.2 Q5 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQH|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA 30 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 1.2 1.4 1.7 V
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, IDS = 40 A 1.15 1.5 mΩ
VGS = 10 V, IDS = 40 A 0.95 1.15 mΩ
gƒs Transconductance VDS = 15 V, IDS = 40 A 235 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		 7070 9200 pF
Coss Output Capacitance 1780 2314 pF
Crss Reverse Transfer Capacitance 87 113 pF
RG Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (4.5 V) VDS = 15 V, IDS = 40 A 39 51 nC
Qgd Gate Charge Gate-to-Drain 9.3 nC
Qgs Gate Charge Gate-to-Source 14.4 nC
Qg(th) Gate Charge at Vth 8.3 nC
Qoss Output Charge VDS = 15 V, VGS = 0 V 50 nC
td(on) Turn On Delay Time VDS = 15 V, VGS = 4.5 V,
IDS = 40 A, RG = 2 Ω		 20 ns
tr Rise Time 41 ns
td(off) Turn Off Delay Time 32 ns
tƒ Fall Time 14 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 40 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDD= 15 V, IF = 40 A, di/dt = 300 A/μs 80 nC
trr Reverse Recovery Time 37 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance(1) 1.2 °C/W
RθJA Junction-to-Ambient Thermal Resistance(1)(2) 50
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
M0137-01_LPS198.gif
 Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick) Cu.
M0137-02_LPS198.gif
 Max RθJA = 125°C/W when mounted on a minimum pad area of
2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS374A.png
Figure 1. Transient Thermal Impedance
graph02p2_SLPS374.png
Figure 2. Saturation Characteristics
graph04_SLPS374.png
Figure 4. Gate Charge
graph06p2_SLPS374.png
Figure 6. Threshold Voltage vs Temperature
graph08p2_SLPS374.png
Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS374A.png
Figure 10. Safety Operating Area
graph12p2_SLPS374.png
Figure 12. Maximum Drain Current vs Temperature
graph03_SLPS374.png
Figure 3. Transfer Characteristics
graph05_SLPS374.png
Figure 5. Capacitance
graph07p3_SLPS374.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS374.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS374.png
Figure 11. Single Pulse Unclamped Inductive Switching