ZHCSAE6B September   2012  – January 2016 CSD17551Q3A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     顶视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 社区资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q3A 封装尺寸
    2. 7.2 Q3A 建议的 PCB 布局
    3. 7.3 Q3A 建议的模板布局
    4. 7.4 Q3A 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DNH|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-source leakage current VDS = 0V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.1 1.6 2.1 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 11 A 9.6 11.8 mΩ
VGS = 10 V, ID = 11 A 7.8 9 mΩ
gfs Transconductance VDS = 15 V, ID = 11 A 101 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 1050 1370 pF
Coss Output capacitance 244 317 pF
Crss Reverse transfer capacitance 24 31 pF
RG Series gate resistance 1.5 3 Ω
Qg Gate charge total (4.5 V) VDS = 15 V, ID = 11 A 6 7.8 nC
Qgd Gate charge gate to drain 1.5 nC
Qgs Gate charge gate to source 2.3 nC
Qg(th) Gate charge at Vth 1.4 nC
Qoss Output charge VDS = 15 V, VGS = 0 V 7.4 nC
td(on) Turn on delay time VDS = 15 V, VGS = 4.5 V,
IDS = 11 A, RG = 2 Ω		 8 ns
tr Rise time 24 ns
td(off) Turn off delay time 12 ns
tf Fall time 3.4 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 11 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS= 13.5 V, IF = 11 A,
di/dt = 300 A/μs		 13 nC
trr Reverse recovery time 14 ns