ZHCSHD2D 数据表 | 德州仪器 TI.com.cn

ZHCSHD2D January 2018 – October 2023 CSD16401Q5

PRODUCTION DATA

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise noted)

Figure 5-1 Transient Thermal Impedance

Figure 5-2 Saturation Characteristics

I_D = 40 A

V_DS = 12.5 V

Figure 5-4 Gate Charge

I_D = 250 µA

Figure 5-6 Threshold Voltage vs Temperature

I_D = 40 A

Figure 5-8 On-Resistance vs Temperature

Single pulse, max R_θJC = 0.8°C/W

Figure 5-10 Maximum Safe Operating Area

Figure 5-12 Maximum Drain Current vs Temperature

V_DS = 5 V

Figure 5-3 Transfer Characteristics

Figure 5-5 Capacitance

Figure 5-7 On-Resistance vs Gate Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Single-Pulse Unclamped Inductive Switching