ZHCSFM3B October   2016  – February 2022 CSD13385F5

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Revision History

Changes from Revision A (May 2017) to Revision B (February 2022)

  • 将超薄型封装要点中的厚度从 0.35mm 更改为 0.36mmGo
  • 将超薄型封装图片中的厚度从 0.35mm 更新为 0.36mm。Go
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

Changes from Revision * (October 2016) to Revision A (May 2017)

  • Changed IDSS andIGSS unit value from µA to nA in the Electrical Characteristics table. Go