ZHCSBB0F July   2013  – January 2022 CSD13381F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD13381F4 Embossed Carrier Tape Dimensions

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = 250 μA12V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = 9.6 V100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = 8 V50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = 250 μA0.650.851.10V
RDS(on)Drain-to-Source
On-Resistance		VGS = 1.8 V, IDS = 0.5 A310400mΩ
VGS = 2.5 V, IDS = 0.5 A170225mΩ
VGS = 4.5 V, IDS = 0.5 A140180mΩ
gƒsTransconductanceVDS = 6 V, IDS = 0.5 A3.2S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = 6 V,
ƒ = 1 MHz		155200pF
CossOutput Capacitance4762pF
CrssReverse Transfer Capacitance2.53.3pF
RGSeries Gate Resistance23Ω
QgGate Charge Total (4.5 V)VDS = 6 V, IDS = 0.5 A10601400pC
QgdGate Charge Gate-to-Drain140pC
QgsGate Charge Gate-to-Source230pC
Qg(th)Gate Charge at Vth155pC
QossOutput ChargeVDS = 6 V, VGS = 0 V1120pC
td(on)Turn On Delay TimeVDS = 6 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω		3.7ns
trRise Time1.5ns
td(off)Turn Off Delay Time11.0ns
tƒFall Time3.8ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 0.5 A, VGS = 0 V0.730.9V
QrrReverse Recovery ChargeVDS= 6 V, IF = 0.5 A, di/dt = 300 A/μs1550pC
trrReverse Recovery Time6ns