ZHCSFM0A October   2016  – February 2022 CSD13380F3

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-BD656852-4FB2-45D8-8C8B-C1E9915D693E-low.gifFigure 5-1 Transient Thermal Impedance
GUID-8FDDC15C-2E7E-41B4-898B-9CE3A6E57FD2-low.png
VDS = 5 V
Figure 5-3 Transfer Characteristics
GUID-9CFB847F-69EF-4E69-A57B-8EA4FAAACD8E-low.gifFigure 5-2 Saturation Characteristics
GUID-D089889C-6F24-48CE-93EE-DD24D16382E0-low.gif
VDS = 6 VID = 0.4 A
Figure 5-4 Gate Charge
GUID-6C70F69E-EB0F-411A-B82C-41962BD48C5F-low.gif
ID = 250 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-0CF1E52C-F5C9-4E42-A5DF-3ED437BB61FD-low.gif
ID = 0.4A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-F7A9AA8A-0D98-40ED-8DDB-CFDDA1CDBF58-low.gif
Single pulse, typical RθJA = 255°C/W (min Cu)
Figure 5-10 Maximum Safe Operating Area
GUID-FEC9375B-99C2-41F4-91DA-302A7BB07E3A-low.gif
Typical RθJA = 255°C/W (min Cu)
Figure 5-12 Maximum Drain Current vs Temperature
GUID-F87C0969-9A2A-4E6D-8E72-56C6A274F9A2-low.gifFigure 5-5 Capacitance
GUID-72501334-AFB4-4CE2-8BC7-E1F21FB0C411-low.gifFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-6A1FE429-DFF6-48AC-9B60-BF2D3FBE43F6-low.gifFigure 5-9 Typical Diode Forward Voltage
GUID-AAC2045F-1619-4468-BD0F-868129B6D27A-low.gifFigure 5-11 Single Pulse Unclamped Inductive Switching