ZHCSTF3H June   2007  – February 2024 CDCE913 , CDCEL913

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 EEPROM Specification
    7. 5.7 Timing Requirements: CLK_IN
    8. 5.8 Timing Requirements: SDA/SCL
    9. 5.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Terminal Configuration
      2. 7.3.2 Default Device Configuration
      3. 7.3.3 SDA/SCL Serial Interface
      4. 7.3.4 Data Protocol
    4. 7.4 Device Functional Modes
      1. 7.4.1 SDA/SCL Hardware Interface
    5. 7.5 Programming
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Spread-Spectrum Clock (SSC)
        2. 8.2.2.2 PLL Frequency Planning
        3. 8.2.2.3 Crystal Oscillator Start-up
        4. 8.2.2.4 Frequency Adjustment with Crystal Oscillator Pulling
        5. 8.2.2.5 Unused Inputs/Outputs
        6. 8.2.2.6 Switching Between XO and VCXO Mode
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Register Maps
    1. 9.1 SDA/SCL Configuration Registers
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Layout Guidelines

When the CDCE913 is used as a crystal buffer, any parasitics across the crystal affects the pulling range of the VCXO. Therefore, take care placing the crystal units on the board. Crystals must be placed as close to the device as possible, ensuring that the routing lines from the crystal terminals to XIN and XOUT have the same length.

If possible, cut out both ground plane and power plane under the area where the crystal and the routing to the device are placed. In this area, always avoid routing any other signal line, as it could be a source of noise coupling.

Additional discrete capacitors can be required to meet the load capacitance specification of certain crystal. For example, a 10.7-pF load capacitor is not fully programmable on the chip, because the internal capacitor can range from 0 pF to 20 pF with steps of 1 pF. The 0.7-pF capacitor therefore can be discretely added on top of an internal 10-pF capacitor.

To minimize the inductive influence of the trace, TI recommends placing this small capacitor as close to the device as possible and symmetrically with respect to XIN and XOUT.

Figure 8-11 shows a conceptual layout detailing recommended placement of power supply bypass capacitors. For component side mounting, use 0402 body size capacitors to facilitate signal routing. Keep the connections between the bypass capacitors and the power supply on the device as short as possible. Ground the other side of the capacitor using a low-impedance connection to the ground plane.