ZHCSJJ0C August   2000  – March 2024 BUF634

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: TO-220 and TO-263 Packages
    6. 6.6 Electrical Characteristics: Wide-Bandwidth Mode for SOIC Package
    7. 6.7 Electrical Characteristics: Low-Quiescent-Current Mode for SOIC Package
    8. 6.8 Typical Characteristics: TO-220 and TO-263 Packages
    9. 6.9 Typical Characteristics: SOIC Package
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Current
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 High Frequency Applications
    2. 8.2 Typical Application
      1. 8.2.1 Boosting Op Amp Output Current
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Dissipation
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 TINA-TI™ 仿真软件（免费下载）
        2. 9.1.1.2 TI 参考设计
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 静电放电警告
    7. 9.7 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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订购信息

6.4 Thermal Information

THERMAL METRIC(1) BUF634 UNIT
D (SOIC) KC (TO-220) KTT (TO-263)
8 PINS 5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 123 32.1 41.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55 25.6 45 °C/W
RθJB Junction-to-board thermal resistance 68 18.3 24.8 °C/W
ψJT Junction-to-top characterization parameter 12 8.5 13.1 °C/W
ψJB Junction-to-board characterization parameter 67 17.7 23.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 0.7 2.4 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.