SLUSA96B August   2010  – April 2016 BQ32002

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IRQ Function
      2. 7.3.2 VBACK Switchover
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 I2C Serial Interface
    6. 7.6 Register Maps
      1. 7.6.1 I2C Read After Backup Mode
      2. 7.6.2 Normal Register Descriptions
      3. 7.6.3 Special Function Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Reading From a Register
        2. 8.2.2.2 Leap Year Compensation
        3. 8.2.2.3 Utilizing the Backup Supply
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage VCC to GND –0.3 4 V
All other pins to GND –0.3 VCC + 0.3
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature after reflow –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC Supply voltage, VCC to GND 3 3.6 V
TA Operating free-air temperature –40 85 °C
fo Crystal resonant frequency 32.768 kHz
RS Crystal series resistance 70 kΩ
CL Crystal load capacitance(1) 12 pF
(1) Crystal load capacitance ±10% is allowed.

6.4 Thermal Information

THERMAL METRIC(1) BQ32002 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 114.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 59.1 °C/W
RθJB Junction-to-board thermal resistance 55.5 °C/W
ψJT Junction-to-top characterization parameter 11.9 °C/W
ψJB Junction-to-board characterization parameter 55 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
POWER SUPPLY
ICC VCC supply current 65 200 μA
VBACK Backup supply voltage Operating 1.4 VCC V
Switchover 2 VCC
IBACK Backup supply current VCC = 0 V, VBAT = 3 V, Oscillator on, TA = 25°C 0.9(1) 1.5 μA
VSO Switchover voltage Operating → Backup 1.8 V
Backup → Operating 2.4
LOGIC LEVEL INPUTS
VIL Input low voltage 0.3 × VCC V
VIH Input high voltage 0.7 × VCC V
IIN Input current 0 V ≤ VIN ≤ VCC –1 1 μA
LOGIC LEVEL OUTPUTS
VOL Output low voltage IOL = 3 mA 0.4 V
IL Leakage current –1 1 μA
REAL-TIME CLOCK CHARACTERISTICS
Pre-calibration accuracy VCC = 3.3 V, VBAT = 3 V, Oscillator on, TA = 25°C ±35(2) ppm
(1) The backup supply current is measured only after an initial power up. The device behavior is not ensured before the first power up.
(2) Typical accuracy is measured using reference board design and KDS DMX-26S surface-mount 32.768-kHz crystal. Variation in board design and crystal section results in different typical accuracy.

6.6 Timing Requirements

PARAMETER STANDARD MODE FAST MODE UNIT
MIN NOM MAX MIN NOM MAX
fscl I2C clock frequency 0 100 0 400 kHz
tsch I2C clock high time 4 0.6 μs
tscl I2C clock low time 4.7 1.3 μs
tsp I2C spike time 0 50 0 50 ns
tsds I2C serial data setup time 250 100 ns
tsdh I2C serial data hold time 0 0 ns
ticr I2C input rise time 1000 20 + 0.1Cb (1) 300 ns
ticf I2C input fall time 300 20 + 0.1Cb (1) 300 ns
tocf I2C output fall time 300 20 + 0.1Cb (1) 300 μs
tbuf I2C bus free time 4.7 1.3 μs
tsts I2C Start setup time 4.7 0.6 μs
tsth I2C Start hold time 4 0.6 μs
tsps I2C Stop setup time 4 0.6 μs
tvd (data) Valid data time (SCL low to SDA valid) 1 1 μs
tvd (ack) Valid data time of ACK
(ACK signal from SCL low to SDA low)		 1 1 μs
(1) Cb = total capacitance of one bus line in pF

6.7 Typical Characteristics

BQ32002 C001_SLUS900.png
Figure 1. Current Consumption vs Backup Supply Voltage
BQ32002 C002_SLUS900.png
Figure 2. Current Consumption vs Backup Supply Voltage