ZHCSD66B January   2014  – May 2017

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Power On
      3. 8.3.3 Power-Path Management
        1. 8.3.3.1 Input Source Connected - Adapter or USB
          1. 8.3.3.1.1 Input DPM Mode, VIN-DPM
          2. 8.3.3.1.2 DPPM Mode
          3. 8.3.3.1.3 Battery Supplement Mode
        2. 8.3.3.2 Input Source Not Connected
      4. 8.3.4 Battery Charging
        1. 8.3.4.1 Charge Current Translator
        2. 8.3.4.2 Battery Detection and Recharge
        3. 8.3.4.3 Termination Disable (TD Input, bq24230H)
        4. 8.3.4.4 Adjustable Termination Threshold (ITERM Input, bq24232H)
        5. 8.3.4.5 Dynamic Charge Timers (TMR Input)
        6. 8.3.4.6 Status Indicators (PGOOD, CHG)
          1. 8.3.4.6.1 Timer Fault
        7. 8.3.4.7 Thermal Regulation and Thermal Shutdown
      5. 8.3.5 Battery Pack Temperature Monitoring
    4. 8.4 Device Functional Modes
      1. 8.4.1 Explanation of Deglitch Times and Comparator Hysteresis
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Calculations
          1. 9.2.2.1.1 Program the Fast-Charge Current (ISET):
          2. 9.2.2.1.2 Program the Input Current Limit (ILIM)
          3. 9.2.2.1.3 Program the Termination Current Threshold (ITERM)
          4. 9.2.2.1.4 Program 6.25-Hour Fast-Charge Safety Timer (TMR)
        2. 9.2.2.2 TS Function
        3. 9.2.2.3 CHG and PGOOD
        4. 9.2.2.4 Selecting IN, OUT, AND BAT Pin Capacitors
        5. 9.2.2.5 Sleep Mode
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 Stand-Alone Charger
  10. 10Power Supply Recommendations
    1. 10.1 Requirements for OUT Output
    2. 10.2 USB Sources and Standard AC Adapters
    3. 10.3 Half-Wave Adapters
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Package
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 相关链接
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings(1)

over the 0°C to 125°C operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI Input voltage IN (with respect to VSS) –0.3 28 V
OUT (with respect to VSS) –0.3 7 V
BAT (with respect to VSS) –0.3 5 V
EN1, EN2, CE, TS, ISET, PGOOD, CHG, ILIM, TMR, TD, ITERM (with respect to VSS) –0.3 7 V
II Input current IN 600 mA
IO Output current (continuous) OUT 1700 mA
BAT (Discharge mode) 1700 mA
Output sink current CHG, PGOOD 15 mA
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±500 V may actually have higher performance.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VI IN voltage range 4.35 26 V
IN operating voltage range '230H 4.35 6.4 V
'232H 4.35 10.2
IIN Input current, IN pin 500 mA
IOUT Current, OUT pin 1500 mA
IBAT Current, BAT pin (discharging) 1500 mA
ICHG Current, BAT pin (charging) 500 mA
TJ Junction temperature –40 125 °C
RILIM Maximum input current programming resistor 3.1 7.8 kΩ
RISET Fast-charge current programming resistor 1.74 34.8 kΩ
RTMR Timer programming resistor 18 72 kΩ
RITERM Termination programming resistor '232H 0 15 kΩ

7.4 Thermal Information

THERMAL METRIC(1) bq2423xx UNIT
RGT
16 PINS
θJA Junction-to-ambient thermal resistance 44.5 °C/W
θJCtop Junction-to-case (top) thermal resistance 54.2
θJB Junction-to-board thermal resistance 17.2
ψJT Junction-to-top characterization parameter 1.0
ψJB Junction-to-board characterization parameter 17.1
θJCbot Junction-to-case (bottom) thermal resistance 3.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
UVLO Undervoltage lockout VIN: 0 V → 4 V 3.2 3.3 3.4 V
Vhys(UVLO) Hysteresis on UVLO VIN: 4 V → 0 V 200 300 mV
VIN(DT) Input power detection threshold Input power detected when VIN > VBAT + VIN(DT)
VBAT = 3.6 V, VIN: 3.5 V → 4 V		 55 95 145 mV
Vhys(INDT) Hysteresis on VIN(DT) VBAT = 3.6 V, VIN: 4 V → 3.5 V 20 mV
tDGL(PGOOD) Deglitch time, input power detected status Time measured from VIN: 0 V → 5 V 1-μs
rise time to PGOOD = LO		 2 ms
VOVP Input overvoltage protection threshold ('230H) VIN: 5 V → 7 V 6.4 6.6 6.8 V
('232H) VIN: 5 V → 11 V 10.2 10.5 10.8
Vhys(OVP) Hysteresis on OVP ('230H) VIN: 7 V → 5V 110 mV
('232H) VIN: 11 V → 5 V 175
tDGL(OVP) Input overvoltage blanking time 50 μs
tREC(OVP) Input overvoltage recovery time Time measured from VIN: 11 V → 5 V 1 μs
fall time to PGOOD = LO		 2 ms
ILIM, ISET SHORT-CIRCUIT TEST
ISC Current source VIN > UVLO and VIN > VBAT+VIN(DT) 1.3 mA
VSC VIN > UVLO and VIN > VBAT+VIN(DT) 520 mV
QUIESCENT CURRENT
IBAT(PDWN) Sleep current into BAT pin CE = LO or HI, input power not detected, no load on OUT pin, TJ = 85°C 6.5 μA
IIN(STDBY) Standby current into IN pin EN1= HI, EN2=HI, VIN = 6 V, TJ=85°C 50 μA
EN1= HI, EN2=HI, VIN = 10 V, TJ=85°C 200
ICC Active supply current, IN pin CE = LO, VIN = 6 V, no load on OUT pin,
VBAT > VBAT(REG), (EN1, EN2) ≠ (HI, HI)		 1.5 mA
POWER PATH
VDO(IN-OUT) VIN – VOUT VIN = 4.45 V, IIN = 500 mA, VBAT = 4.35 V 150 237.5 mV
VDO(BAT-OUT) VBAT – VOUT IOUT = 500 mA, VIN = 0 V, VBAT > 3 V 62.5 mV
VO(REG) OUT pin voltage regulation VIN > VOUT + VDO (IN-OUT) 4.4 4.5 4.6 V
IINmax Maximum input current EN1 = LO, EN2 = LO 90 95 100 mA
EN1 = HI, EN2 = LO 450 475 500
EN1 = LO, EN2 = HI KILIM/RILIM A
KILIM Maximum input current factor ILIM = 200mA to 500mA 1380 1530 1680 AΩ
IINmax Programmable input current limit range EN2 = HI, EN1 = LO, RILIM = 3.1 kΩ to 7.8 kΩ 200 500 mA
VIN-DPM Input voltage threshold when input current is reduced EN2 = LO, EN1 = X 4.35 4.50 4.63 V
VDPPM Output voltage threshold when charging current is reduced VO(REG) – 180 mV VO(REG) –
100 mV		 VO(REG) – 30 mV V
VBSUP1 Enter battery supplement mode VBAT = 3.6 V, RILIM = 1.5 kΩ,
RLOAD = 10 Ω →2 Ω		 VOUT ≤ VBAT –40 mV V
VBSUP2 Exit battery supplement mode VBAT = 3.6 V, RILIM = 1.5 kΩ,
RLOAD = 2 Ω →10 Ω		 VOUT ≥ VBAT–20 mV V
VO(SC1) Output short-circuit detection threshold, power-on VIN > UVLO and VIN > VBAT + VIN(DT) 0.8 0.9 1 V
VO(SC2) Output short-circuit detection threshold, supplement mode VBAT – VOUT > VO(SC2) indicates short circuit VIN > UVLO and VIN > VBAT + VIN(DT) 200 250 300 mV
tDGL(SC2) Deglitch time, supplement mode short circuit 250 μs
tREC(SC2) Recovery time, supplement mode short circuit 60 ms
BATTERY CHARGER
IBAT(SC) Source current for BAT pin short-circuit detection VBAT = 1.5 V 4 7.5 11 mA
VBAT(SC) BAT pin short-circuit detection threshold VBAT rising 1.6 1.8 2 V
VBAT(REG) Battery charge voltage 4.306 4.35 4.394 V
VLOWV Precharge to fast-charge transition threshold VIN > UVLO and VIN > VBAT + VIN(DT) 2.9 3 3.1 V
tDGL1(LOWV) Deglitch time on precharge to fast-charge transition 25 ms
tDGL2(LOWV) Deglitch time on fast-charge to precharge transition 25 ms
ICHG Battery fast-charge current range VBAT(REG) > VBAT > VLOWV, VIN = 5 V, CE = LO, EN1 = LO, EN2 = HI 25 500 mA
Battery fast-charge current CE = LO, EN1= LO, EN2 = HI,
VBAT > VLOWV, VIN = 5 V, IINmax > ICHG, no load on OUT pin, thermal loop and DPM loop not active		 KISET/RISET A
KISET Fast-charge current factor 25 mA ≤ ICHG ≤ 500 mA 797 870 975 AΩ
KPRECHG Precharge current factor 2.5 mA ≤ IPRECHG ≤ 50 mA 70 88 106 AΩ
ITERM Termination comparator threshold for internally set termination detection CE = LO, (EN1,EN2) ≠ (LO,LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPM loop and thermal loop not active 		0.09 x ICHG 0.1 x ICHG 0.11 x ICHG A
CE = LO, (EN1,EN2) = (LO,LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPM loop and thermal loop not active 		0.027 x ICHG 0.033 x ICHG 0.040 x ICHG
ITERM Termination current threshold for programmable termination detection ITERM = 0% to 50% of ICHG KITER x RITERM/RISET A
IBIAS(ITERM) Current for external termination-setting resistor 72 75 78 μA
KITERM K factor for termination detection threshold (externally set) (bq24232H) CE = LO, (EN1,EN2) ≠ (LO,LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPM loop and thermal loop not active 		0.024 0.030 0.036 A
CE = LO, (EN1,EN2) = (LO,LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPM loop and thermal loop not active 		0.009 0.010 0.011
tDGL(TERM) Deglitch time, termination detected 25 ms
VRCH Recharge detection threshold VIN > UVLO and VIN > VBAT + VIN(DT) VBAT(REG) –140 mV VBAT(REG) –100 mV VBAT(REG) –60 mV V
tDGL(RCH) Deglitch time, recharge threshold detected 62.5 ms
tDGL(NO-IN) Delay time, input power loss to charger turnoff VBAT = 3.6 V. Time measured from
VIN: 5 V → 3 V 1-μs fall time		 20 ms
IBAT(DET) Sink current for battery detection VBAT=2.5 V 5 7.5 10 mA
tDET Battery detection timer BAT high or low 250 ms
BATTERY CHARGING TIMERS
tPRECHG Precharge safety timer value TMR = floating 1440 1800 2160 s
tMAXCHG Charge safety timer value TMR = floating 14400 18000 21600 s
tPRECHG Precharge safety timer value 18 kΩ < RTMR < 72 kΩ RTMR × KTMR s
tMAXCHG Charge safety timer value 18 kΩ < RTMR < 72 kΩ 10 × RTMR × KTMR s
KTMR Timer factor 30 40 50 s/kΩ
BATTERY-PACK NTC MONITOR(1)
INTC NTC bias current VIN > UVLO and VIN > VBAT + VIN(DT) 72 75 78 μA
VHOT High-temperature trip point Battery charging, VTS Falling 270 300 330 mV
VHYS(HOT) Hysteresis on high trip point Battery charging, VTS Rising from VHOT 30 mV
VCOLD Low-temperature trip point Battery charging, VTS Rising 2000 2100 2200 mV
VHYS(COLD) Hysteresis on low trip point Battery charging, VTS Falling from VCOLD 300 mV
tDGL(TS) Deglitch time, pack temperature fault detection Battery charging, VTS Falling 50 ms
VDIS(TS) TS function disable threshold TS unconnected (applies with TD pin on bq24230H) VIN-200 mV V
THERMAL REGULATION
TJ(REG) Temperature regulation limit 125 °C
TJ(OFF) Thermal shutdown temperature TJ rising 155 °C
TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C
LOGIC LEVELS ON EN1, EN2, CE, TD
VIL Logic LOW input voltage 0 0.4 V
VIH Logic HIGH input voltage 1.4 6.0 V
IIL Input sink current VIL = 0 V 1 μA
IIH Input source current VIH = 1.4 V 10 μA
LOGIC LEVELS ON PGOOD, CHG
VOL Output LOW voltage ISINK = 5 mA 0.4 V
(1) These numbers set trip points of 0°C and 50°C while charging, with 3°C hysteresis on the trip points, with a Vishay Type 2 curve NTC with an R25 of 10 kΩ.

7.6 Typical Characteristics

Typical Application Circuit, EN1 = 0, EN2 = 1, TA = 25°C, unless otherwise noted.
bq24230H bq24232H g009_lusbi8.gif
Figure 1. Dropout Voltage vs Temperature
bq24230H bq24232H g011_lusbi8.gif
Figure 3. Output Voltage vs Temperature
bq24230H bq24232H vbat_tj_lus821.gif
Figure 5. Battery Regulation Voltage vs Temperature
bq24230H bq24232H g014_lusbi8.gif
Figure 7. Output Voltage Threshold vs Temperature (bq24232H)
bq24230H bq24232H ibat2_vbat_lusbi8.gif
Figure 9. Fast-Charge Current vs Battery Voltage
bq24230H bq24232H g010_lusbi8.gif
Figure 2. Dropout Voltage vs Temperature
bq24230H bq24232H g012_lusbi8.gif
Figure 4. Output Regulation Voltage vs Temperature
bq24230H bq24232H ovp_tj_lus821.gif
Figure 6. Output Voltage Threshold vs Temperature (bq24230H)
bq24230H bq24232H il_vir_lus821.gif
Figure 8. Input Current Limit Threshold vs Input Voltage
bq24230H bq24232H ibat4_vbat_lusbi8.gif
Figure 10. Precharge Current vs Battery Voltage