SNVSA75D November   2015  – May 2017

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Power Line FET Control Electrical Characteristics
    9. 7.9  Current Sinks Electrical Characteristics
    10. 7.10 PWM Brightness Control Electrical Characteristics
    11. 7.11 Boost or SEPIC Converter Characteristics
    12. 7.12 Logic Interface Characteristics
    13. 7.13 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated DC-DC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Current Sink Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Power Line FET Control
      5. 8.3.5 Fault Detections
        1. 8.3.5.1 Adaptive DC-DC Voltage Control and Functionality of LED Fault Comparators
        2. 8.3.5.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 2 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
          6. 9.2.1.2.6 Power Line Transistor
          7. 9.2.1.2.7 Input Current Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 SEPIC Mode Application
        1. 9.2.2.1 Detailed Design Procedure
          1. 9.2.2.1.1 Inductor
          2. 9.2.2.1.2 Diode
          3. 9.2.2.1.3 Capacitor C1
        2. 9.2.2.2 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Layout

Layout Guidelines

Figure 27 shows a recommended layout for the LP8862-Q1 used to demonstrate the principles of a good layout. This layout can be adapted to the actual application layout if or where possible. It is important that all boost components are close to the chip, and the high current traces must be wide enough. By placing boost components on one side of the chip it is easy to keep the ground plane intact below the high current paths. This way other chip pins can be routed more easily without splitting the ground plane. Place LDO capacitor as close to LDO pin as possible.

Here are some main points to help the PCB layout work:

  • Current loops need to be minimized:
    • For low frequency the minimal current loop can be achieved by placing the boost components as close as possible to the SW and PGND pins. Input and output capacitor grounds need to be close to each other to minimize current loop size.
    • Minimal current loops for high frequencies can be achieved by making sure that the ground plane is intact under the current traces. High frequency return currents try to find route with minimum impedance, which is the route with minimum loop area, not necessarily the shortest path. Minimum loop area is formed when return current flows just under the positive current route in the ground plane, if the ground plane is intact under the route.
  • The GND plane needs to be intact under the high current boost traces to provide shortest possible return path and smallest possible current loops for high frequencies.
  • Current loops when the boost switch is conducting and not conducting need to be on the same direction in optimal case.
  • Inductor placement should be so that the current flows in the same direction as in the current loops. Rotating inductor 180° changes current direction.
  • Use separate power and noise free grounds. The power ground is used for boost converter return current and noise-free ground for more sensitive signals, like LDO bypass capacitor grounding as well as grounding the GND pin of LP8862-Q1 device itself.
  • Boost output feedback voltage to LEDs needs to be taken out after the output capacitors, not straight from the diode cathode.
  • Place LDO 1-µF bypass capacitor as close as possible to the LDO pin.
  • Input and output capacitors need strong grounding (wide traces, many vias to GND plane).
  • If two output capacitors are used they need symmetrical layout to get both capacitors working ideally.
  • Output ceramic capacitors have DC-bias effect. If the output capacitance is too low, it can cause boost to become unstable on some loads and this increases EMI. DC bias characteristics need to be obtained from the component manufacturer; it is not taken into account on component tolerance. X5R/X7R capacitors are recommended.

Layout Example

LP8862-Q1 layoutb_SNVSA75.gif Figure 27. LP8862-Q1 Boost Layout