SBAS895B May   2018  – April 2020

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Isolation Channel Signal Transmission
      3. 8.3.3 Fail-Safe Output
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7.9 Electrical Characteristics

minimum and maximum specifications of the AMC1300 apply from TA = –40°C to +125°C, VDD1  = 4.5 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP = –250 mV to +250 mV, and INN = GND1 = 0 V; minimum and maximum specifications of the AMC1300B apply from TA = –55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP = –250 mV to +250 mV, and INN = GND1 = 0 V; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
VCMov Common-mode overvoltage detection level VDD1 – 2 V
Hysteresis of common-mode overvoltage detection level 95 mV
VOS Input offset voltage(1) AMC1300, initial, at TA = 25°C,
VINP = VINN = GND1		 –2 ±0.01 2 mV
AMC1300B, initial, at TA = 25°C,
VINP = VINN = GND1		 –0.2 ±0.01 0.2
TCVOS Input offset drift(1) AMC1300 –4 ±1.3 4 µV/°C
AMC1300B –3 ±1 3
CMRR Common-mode rejection ratio fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max –100 dB
fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max –98
CIN Single-ended input capacitance INN = GND1, fIN = 275 kHz 2 pF
CIND Differential input capacitance fIN = 275 kHz 1 pF
RIN Single-ended input resistance INN = GND1 19 kΩ
RIND Differential input resistance 22 kΩ
IIB Input bias current INP = INN = GND1, IIB = (IIBP + IIBN) / 2 –41 –30 –24 µA
TCIIB Input bias current drift ±1 nA/°C
IIO Input offset current ±5 nA
ANALOG OUTPUT
Nominal gain 8.2 V/V
EG Gain error(1) AMC1300, initial, at TA = 25°C –1% 0.4% 1%
AMC1300B, initial, at TA = 25°C –0.3% ±0.05% 0.3%
TCEG Gain error drift(1) AMC1300 ±50 ppm/°C
AMC1300B –50 ±15 50
Nonlinearity(1) –0.03% ±0.01% 0.03%
Nonlinearity drift ±1 ppm/°C
THD Total harmonic distortion VIN = 0.5 V, fIN = 10 kHz, BW = 100 kHz –85 dB
Output noise VINP = VINN = GND1, BW = 100 kHz 230 µVRMS
SNR Signal-to-noise ratio VIN = 0.5 V, fIN = 1 kHz, BW = 10 kHz 80 85 dB
VIN = 0.5 V, fIN = 10 kHz, BW = 100 kHz 72
PSRR Power-supply rejection ratio(2) PSRR vs VDD1, at DC –103 dB
PSRR vs VDD1, 100-mV and 10-kHz ripple –96
PSRR vs VDD2, at DC –106
PSRR vs VDD2, 100-mV and 10-kHz ripple –86
VCMout Common-mode output voltage 1.39 1.44 1.49 V
VFAILSAFE Failsafe differential output voltage VCM ≥ VCMov or VDD1 missing –2.6 –2.5 V
BW Output bandwidth AMC1300 170 230 kHz
AMC1300B 250 310
ROUT Output resistance On OUTP or OUTN < 0.2 Ω
Output short-circuit current ±13 mA
CMTI Common-mode transient immunity |GND1 – GND2| = 1 kV, AMC1300 15 30 kV/µs
|GND1 – GND2| = 1 kV, AMC1300B 75 140
POWER SUPPLY
VDD1UV VDD1 undervoltage detection threshold voltage VDD1 falling 1.75 2.53 2.7 V
IDD1 High-side supply current AMC1300B only, 3.0 V ≤ VDD1 ≤ 3.6 V 6.3 8.5 mA
4.5 V ≤ VDD1 ≤ 5.5 V 7.2 9.8
IDD2 Low-side supply current 3.0 V ≤ VDD2 ≤ 3.6 V 5.3 7.2 mA
4.5 V ≤ VDD2 ≤ 5.5 V 5.9 8.1
(1) The typical value includes one sigma statistical variation.
(2) This parameter is output referred.