SBAS895B May   2018  – April 2020

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Isolation Channel Signal Transmission
      3. 8.3.3 Fail-Safe Output
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

5 Device Comparison Table

PARAMETER AMC1300B AMC1300
High-side supply voltage, VDD1 3.0 V to 5.5 V 4.5 V to 5.5 V
Specified ambient temperature, TA –55°C to +125°C –40°C to +125°C
Input offset voltage, VOS 4.5 V ≤ VDD1 ≤ 5.5 V ±0.2 mV ±2 mV
3.0 V ≤ VDD1 ≤ 4.5 V Not applicable
Input offset drift, TCVOS ±3 µV/°C (max) ±4 µV/°C (max)
Gain error, EG ±0.3% ±1%
Gain error drift, TCEG ±15 ppm/°C (typ), ±50 ppm/°C (max) ±50 ppm/°C (typ)
Common-mode transient immunity, CMTI 75 kV/µs (min), 140 kV/µs (typ) 15 kV/µs (min), 30 kV/µs (typ)
Output bandwidth, BW 250 kHz (min), 310 kHz (typ) 170 kHz (min), 230 kHz (typ)
INP, INN to OUTP, OUTN signal delay (50% – 90%) 3 µs (max) 3.4 µs (max)