ZHCSAO4F December 2012 – March 2018 UCC27611
PRODUCTION DATA.
High-current gate-driver devices are required in switching power applications for a variety of reasons. To effect the fast switching of power devices, and reduce associated switching-power losses, a powerful gate-driver device employs between the PWM output of control devices and the gates of the power semiconductor devices. Further, gate-driver devices are indispensable when it is not feasible for the PWM controller device to directly drive the gates of the switching devices. With the advent of digital power, this situation is often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal that is not capable of effectively turning on a power switch. A level-shifting circuitry is required to boost the 3.3-V signal to the gate-drive voltage to fully turn-on the power device and minimize conduction losses. Traditional buffer-drive circuits based on NPN/PNP bipolar transistors in a totem-pole arrangement, as emitter-follower configurations, prove inadequate with digital power because the traditional buffer-drive circuits lack level-shifting capability. Gate-driver devices effectively combine both the level-shifting and buffer-drive functions. Gate-driver devices also find other needs such as minimizing the effect of high-frequency switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controller devices by moving gate-charge power losses into the controller.