ZHCSTB3A October   2023  – October 2023 TSM24B

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Revision History
  6. 5Pin Configuration and Functions
  7. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings -JEDEC Specifications
    3. 6.3 ESD Ratings - IEC Specifications
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7Application and Implementation
    1. 7.1 Application Information
  9. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBZ|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO < 100 nA24V
ILEAKLeakage current at VRWMVIO = 24 V, I/O to GND2575nA
VBRBreakdown voltage, I/O to GND (1)IIO = 10 mA26.5V
VFWDForward Voltage, GND to I/O (1)IIO = 10 mA0.7V
VCLAMPSurge clamping voltage, tp = 8/20 µs (2)IPP = 20 A, I/O to GND33V
VCLAMPSurge clamping voltage, tp = 8/20 µs (2)IPP = 20 A, GND to I/O

6

8

V
CLINELine capacitance, IO to GNDVIO = 0 V, f = 1 MHz2437.5pF
(1) VBR is defined as the voltage when 10 mA is applied in the positive-going direction.
(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.