ZHCS971B June   2012  – July 2016 TS3USB3200

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dynamic Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Flexible Power Control
      2. 7.3.2 IOFF Protection Prevents Current Leakage in Powered Down State (VCC and VBUS= 0 V)
      3. 7.3.3 1.8-V Compatible Control Inputs (SEL1, SEL2, and PSEL)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 TS3USB3200 Configured to be Powered by VBUS Through the MicroUSB Connector
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 TS3USB3200 Powered by Mobile Device’s Standalone Battery
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VCC ,VBUS Supply voltage(3) –0.3 5.5 V
VI/O Input/Output DC voltage(3) –0.5 5.5 V
IK Input/Output port diode current VI/O < 0 –50 mA
VI Digital input voltage range (SEL1, SEL2, PSEL) –0.3 5.5 V
IIK Digital logic input clamp current(3) VI < 0 –50 mA
ICC Continuous current through VCC 100 mA
IGND Continuous current through GND –100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VCC Supply voltage 2.7 4.3 V
VBUS VBUS Supply voltage 4.3 5.5 V
VI/O (USB)
VI/O (ID)		 Analog voltage for USB and ID signal path 0 3.6 V
VI/O (MHL) Analog voltage for MHL signal path 1.6 3.4 V
VI Digital input voltage (SEL1, SEL2, PSEL) 0 VCC V
TRAMP (VCC) Power supply ramp time requirement (VCC) 100 1000 μs/V
TRAMP (VBUS) Power supply ramp time requirement (VBUS) 100 1000 μs/V
TA Operating free-air temperature –40 85 ºC

6.4 Thermal Information

THERMAL METRIC(1) TS3USB3200 UNIT
RSV (UQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance(2) 109.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36 °C/W
RθJB Junction-to-board thermal resistance 46.4 °C/W
ψJT Junction-to-top characterization parameter 1 °C/W
ψJB Junction-to-board characterization parameter 49.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.

6.5 Electrical Characteristics

TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MHL SWITCH
RON ON-state resistance VCC = 2.7 V VI/O = 1.6 V, ION = –8 mA 5.7 Ω
ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 1.6 V, ION = –8 mA 0.4 Ω
RON (FLAT) ON-state resistance flatness VCC = 2.7 V VI/O = 1.6 V to 3.4 V, ION = –8 mA 1 Ω
IOZ OFF leakage current VCC = 4.3 V Switch OFF, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = 0 V		 –2 2 µA
IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = NC		 –10 10 µA
ION ON leakage current VCC = 4.3 V Switch ON, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = NC		 –2 2 µA
USB SWITCH
RON ON-state resistance VCC = 2.7 V VI/O = 0.4 V, ION = –8 mA 4.6 Ω
ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 0.4 V, ION = –8 mA 0.4 Ω
RON (FLAT) ON-state resistance flatness VCC = 2.7 V VI/O = 0 V to 0.4 V, ION = –8 mA 1 Ω
IOZ OFF leakage current VCC = 4.3 V Switch OFF, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = 0 V		 –2 2 µA
IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = NC		 –10 10 µA
ION ON leakage current VCC = 4.3 V Switch ON, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = NC		 –2 2 µA
ID SWITCH
RON ON-state resistance VCC = 2.7 V VI/O = 3.3 V, ION = –8 mA 6.5 Ω
ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 3.3 V, ION = –8 mA 0.4 Ω
IOZ OFF leakage current VCC = 4.3 V Switch OFF,
VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = 0 V		 –1 1 µA
IOFF Power-off leakage current VCC = 0 V Switch ON or OFF,
VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = NC		 –10 10 µA
ION ON leakage current VCC = 4.3 V Switch ON, VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = 0 V		 –1 1 µA
DIGITAL CONTROL INPUTS (SEL1, SEL2, PSEL)
VIH Input logic high VCC = 2.7 V to 4.3 V 1.3 V
VIL Input logic low VCC = 2.7 V to 4.3 V 0.6 V
IIN Input leakage current VCC = 4.3 V, VI/O = 0 V to 4.3 V, VIN = 0 V to 2 V –10 10 μA

6.6 Dynamic Characteristics

TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MHL(1)/USB/ ID SWITCH
tpd Propagation Delay RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V 0.1 ns
tON Turnon time RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V 400 ns
tOFF Turnoff time RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V 400 ns
tSK(P) Skew of opposite transitions of same output VCC = 2.7 V or 3.3V VCC = 2.7 V to 4.3 V 0.1 0.2 ns
CON(MHL) MHL path ON capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch ON 1.6 pF
CON(USB) USB path ON capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch ON 1.4 pF
COFF(MHL) MHL path OFF capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch OFF 1.4 pF
COFF(USB) USB path OFF capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch OFF 1.6 pF
CI Digital input capacitance VCC = 3.3 V, VI = 0 or 2V 2.2 pF
OISO OFF Isolation VCC = 2.7 V to 4.3 V, RL = 50 Ω,
f = 240 MHz		 Switch OFF –37 dB
XTALK Crosstalk VCC = 2.7 V to 4.3 V, RL = 50 Ω,
f = 240 MHz		 Switch ON –37 dB
BW(MHL) MHL path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 5.5 GHz
BW(USB) USB path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 5.5 GHz
BW(ID) ID path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 4 GHz
SUPPLY
VBUS VBUS Power supply voltage 4.3 5.5 V
VCC Power supply voltage 2.7 4.3 V
ICC Positive supply current VCC = 4.3 V, VIN = VCC or GND, VI/O = 0 V Switch ON or OFF 40 70 µA
ICC, VBUS Positive supply current (VBUS mode) VCC = 0 V, VBUS = 5.5 V, VIN = VCC or GND, VI/O = 0 V Switch ON or OFF 50 µA
(1) Specified by Design

6.7 Typical Characteristics

TS3USB3200 G005_cds333.png Figure 1. ON-Resistance vs VI for MHL Switch
TS3USB3200 G007_cds333.png
Figure 3. ON-Resistance vs VI for ID Switch
TS3USB3200 G009_cds333.gif
Figure 5. Gain vs Frequency for USB Switch
TS3USB3200 G011_cds333.gif Figure 7. Off Isolation vs Frequency for USB Path
TS3USB3200 G013_cds333.gif Figure 9. Crosstalk vs Frequency for USB Path
TS3USB3200 G006_cds333.png Figure 2. ON-Resistance vs VI for USB Switch
TS3USB3200 G008_cds333.gif
Figure 4. Gain vs Frequency for MHL Switch
TS3USB3200 G010_cds333.gif
Figure 6. Off Isolation vs Frequency for MHL Path
TS3USB3200 G012_cds333.gif Figure 8. Crosstalk vs Frequency for MHL Path