SCDS228F AUGUST   2006  – December 2015 TS3A4741 , TS3A4742

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (3-V Supply)
    6. 6.6 Electrical Characteristics (1.8-V Supply)
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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10 Power Supply Recommendations

Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always sequence VCC on first, followed by NO, NC, or COM.

Although it is not required, power-supply bypassing improves noise margin and prevents switching noise propagation from the VCC supply to other components. A 0.1-μF capacitor, connected from VCC to GND, is adequate for most applications.