ZHCSEO1C March   2012  – February 2016 TPS65177 , TPS65177A

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 I2C Interface Timing Characteristics
    7. 6.7 I2C Timing Diagram
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power-Up
        1. 7.3.1.1 TPS65177
        2. 7.3.1.2 TPS65177A
      2. 7.3.2 Power-Down
      3. 7.3.3 Thermal Shutdown
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Short-Circuit and Overload Protection
        1. 7.3.5.1 Boost Converter (V(AVDD)):
        2. 7.3.5.2 Buck 1 Converter (V(IO)):
        3. 7.3.5.3 Buck 2 Converter (V(CORE)):
        4. 7.3.5.4 Buck 3 Converter (V(HAVDD)):
        5. 7.3.5.5 Positive Charge-Pump Controller (V(GH)):
        6. 7.3.5.6 Negative Charge-Pump Controller (V(GL)):
    4. 7.4 Device Functional Modes
      1. 7.4.1 Boost Converter (V(AVDD))
        1. 7.4.1.1 Soft-Start
        2. 7.4.1.2 Compensation
        3. 7.4.1.3 Setting the Output Voltage V(AVDD)
        4. 7.4.1.4 High Voltage Stress Mode (HVS)
        5. 7.4.1.5 Programmable Current Limit
        6. 7.4.1.6 Design Procedure
        7. 7.4.1.7 Inductor Selection
        8. 7.4.1.8 Rectifier Diode Selection
          1. 7.4.1.8.1 Diode Type
          2. 7.4.1.8.2 Forward Voltage
          3. 7.4.1.8.3 Reverse Voltage
          4. 7.4.1.8.4 Thermal Characteristics
        9. 7.4.1.9 Output Capacitor Selection
      2. 7.4.2 Buck 1 Converter (V(IO))
        1. 7.4.2.1 Soft-Start
        2. 7.4.2.2 Setting the Output Voltage V(IO)
        3. 7.4.2.3 Design Procedure
        4. 7.4.2.4 Inductor Selection
        5. 7.4.2.5 Rectifier Diode Selection
          1. 7.4.2.5.1 Diode Type
          2. 7.4.2.5.2 Forward Voltage
          3. 7.4.2.5.3 Reverse Voltage
          4. 7.4.2.5.4 Forward Current
          5. 7.4.2.5.5 Thermal Characteristics
        6. 7.4.2.6 Output Capacitor Selection
      3. 7.4.3 BUCK 2 CONVERTER (V(CORE))
        1. 7.4.3.1 Soft-Start
        2. 7.4.3.2 Setting the Output Voltage V(CORE)
        3. 7.4.3.3 Design Procedure
        4. 7.4.3.4 Inductor Selection
        5. 7.4.3.5 Output Capacitor Selection
      4. 7.4.4 Buck 3 Converter (V(HAVDD))
        1. 7.4.4.1 Soft-Start
        2. 7.4.4.2 Setting the Output Voltage V(HAVDD)
        3. 7.4.4.3 High Voltage Stress Mode (HVS)
        4. 7.4.4.4 Design Procedure
        5. 7.4.4.5 Inductor Selection
        6. 7.4.4.6 Output Capacitor Selection
      5. 7.4.5 Positive Charge Pump Controller (V(GH)) with Temperature Compensation
        1. 7.4.5.1 Soft-Start
        2. 7.4.5.2 Setting the Output Voltage V(GH)
        3. 7.4.5.3 Design Procedure
        4. 7.4.5.4 Output Capacitor Selection
      6. 7.4.6 Negative Charge Pump Controller (V(GL))
        1. 7.4.6.1 Soft-Start
        2. 7.4.6.2 Setting the Output Voltage V(GL)
        3. 7.4.6.3 Design Procedure
        4. 7.4.6.4 Output Capacitor Selection
    5. 7.5 Gate Pulse Modulation (V(GHM))
    6. 7.6 Programming
      1. 7.6.1  I2C Serial Interface Description
      2. 7.6.2  Memory Description
      3. 7.6.3  Read / Write Description
      4. 7.6.4  Write Operation
        1. 7.6.4.1 Write Single Byte to the DAC Register (DR):
        2. 7.6.4.2 Write Multiple Bytes to the DAC Register (DR):
        3. 7.6.4.3 Write All DAC Register (DR) Data to EEPROM (EE):
      5. 7.6.5  READ OPERATION
        1. 7.6.5.1 Read single data from DAC register (DR):
        2. 7.6.5.2 Read Multiple Data from DAC Register (DR):
        3. 7.6.5.3 Read Single Data to EEPROM (EE):
        4. 7.6.5.4 Read Multiple Data to EEPROM (EE):
      6. 7.6.6  Write Single Data to DAC:
      7. 7.6.7  Write Multiple Data to DAC (Auto Increment Address):
      8. 7.6.8  Write all DAC Data to EEPROM:
      9. 7.6.9  Read Single Data From DAC / EEPROM:
      10. 7.6.10 Read Multiple Data fFom DAC / EEPROM (Auto Increment Address):
    7. 7.7 Register Map
      1. 7.7.1 Registers and DAC Settings
        1. 7.7.1.1  Channel Register (with factory value) - 00h (00h)
        2. 7.7.1.2  Boost Output Voltage V(AVDD) Register (with factory value) - 01h (0Fh)
        3. 7.7.1.3  Boost HVS Offset Voltage Register (with factory value) - 02h (05h)
        4. 7.7.1.4  Boost Current Limit Negative Offset Current Register (with factory value) - 03h (00h)
        5. 7.7.1.5  Boost Soft-start Time Register (with factory value) - 04h (00h)
        6. 7.7.1.6  Buck 1 Output Voltage V(IO) Register (with factory value) - 05h (03h):
        7. 7.7.1.7  Buck 2 Output Voltage V(CORE) Register (with factory value) - 06h (02h)
        8. 7.7.1.8  Buck 3 Output Voltage V(HAVDD) Register (with factory value) - 07h (1Bh)
        9. 7.7.1.9  Pos. Charge Pump Low Output Voltage V(GH_L) Register (with factory value) - 08h (08h):
        10. 7.7.1.10 Positive Charge Pump Low Output Voltage V(GH_L) to V(GH_H) Positive Offset Voltage V(GH_OFS) Register (with factory value) - 09h (04h):
        11. 7.7.1.11 Gate Pulse Modulation Limit Voltage Register (with factory value) - 0Ah (00h)
        12. 7.7.1.12 Negative Charge Pump Output Voltage V(GL) Register (with factory value) - 0Bh (04h)
        13. 7.7.1.13 Buck 3 HVS Offset Voltage Register (with factory value) - 0Ch (00h):
        14. 7.7.1.14 Memory Write Remain Time Register (with factory value) - FEh (0Fh):
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guideline
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 Third-Party Products Disclaimer
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
VALUE UNIT
MIN MAX
Pin Voltage (2) VIO, INBK1, HVS, INVL, INBK3, SWBK3, VHAVDD, SW, SWI, SWO –0.3 20 V
SWBK1 –2 18 V
COMP, EN, A0, SDA, SCL, CTRL, SWBK2, VCORE, INBK2, DRVN, NTC –0.3 7 V
VL –0.3 5.5 V
DRVP, VGH, VGHM, RE –0.3 40 V
VGL –15 0.3 V
Operating junction temperature range –40 150 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With respect to the GND pin.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±700
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
VI Supply input voltage range 8.6 12 14.7 V
C(VL) Internal 5 V regulator (VL) buffer capacitance (after DC-Bias derating) 0.1 1 4.7 µF
BOOST CONVERTER
V(AVDD) Boost output voltage range 13.5 19.8 V
L Boost inductor (inductor value that can be used) 4.7 6.8 10 µH
CI Input capacitor placed at the inductor (ceramic capacitor value) 4.7 10 µF
C(SWI) Isolation Switch input capacitor (ceramic capacitor value) 4.7 10 100 µF
C(SWO) Isolation Switch output capacitor (ceramic capacitor value) 20 40 200 µF
BUCK 1 CONVERTER
V(IO) Buck 1 output voltage range 2.2 3.7 V
L Buck 1 inductor (inductor value that can be used) 4.7 6.8 10 µH
CI Buck 1 input capacitor (ceramic capacitor value) 4.7 10 µF
COUT Buck 1 output capacitor (ceramic capacitor value) 20 30 100 µF
BUCK 2 CONVERTER
V(CORE) Buck 2 output voltage range 0.8 3.3 V
L Buck 2 inductor (inductor value that can be used) 4.7 6.8 10 µH
CI Buck 2 input capacitor (ceramic capacitor value) 4.7 10 µF
COUT Buck 2 output capacitor (ceramic capacitor value) 10 20 50 µF
BUCK 3 CONVERTER
V(HAVDD) Buck 3 output voltage range 4.8 11.1 V
L Buck 3 inductor (inductor value that can be used) 4.7 6.8 10 µH
CIN Buck 3 input capacitor (ceramic capacitor value) 4.7 10 µF
COUT Buck 3 output capacitor (ceramic capacitor value) 4.7 10 50 µF
NEGATIVE CHARGE PUMP CONTROLLER
V(GL) Controller output voltage range –5.5 –14.5 V
C(FLY) Flying capacitor (ceramic capacitor value) 0.1 0.47 4.7 µF
R(switch) Resistance to the switch pin 0 2.2 20 Ω
COUT Output capacitor (ceramic capacitor value) 1 4.7 50 µF
POSITIVE CHARGE PUMP CONTROLLER
V(GH) Controller output voltage range 20 40 V
V(GH_offset) Temperature compensation V(GH) positive offset 0 15 V
C(FLY) Flying capacitor (ceramic capacitor value) 0.1 0.47 4.7 µF
R(switch) Resistance to the switch pin 0 2.2 20 Ω
COUT Output capacitor (ceramic capacitor value) 1 4.7 50 µF
TEMPERATURE
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) RHA (VQFN) UNIT
40 PINS
RθJA Junction-to-ambient thermal resistance 32.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 20.3 °C/W
RθJB Junction-to-board thermal resistance 7.9 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 7.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VI = 12 V, EN = 3.3 V, V(AVDD) = 18 V, V(HAVDD) = 9 V, V(IO) = 3.3 V, V(CORE) = 1.2 V, V(GH) = 28 V, V(GL) = –10.3 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Operating input voltage 8.6 14.7 V
VIT+ Undervoltage lockout threshold (UVLO) VI rising 8 8.3 8.6 V
VIT– Hysteresis VI falling 0.75 V
Thermal shutdown Junction temperature rising 150 ºC
LOGIC SIGNALS
VIH High-level input voltage EN, HVS, SDA, SCL, A0, CTRL 2 V
VIL Low-level input voltage EN, HVS, A0, CTRL 1 V
SDA, SCL 0.9 V
INTERNAL REGULATOR
V(VL) Internal supply 4.9 5 5.1 V
ISOLATION SWITCH
rDS(ON) MOSFET on-resistance I(SWI) = 1 A 100 mΩ
BOOST CONVERTER (V(AVDD))
Switching frequency 600 750 900 kHz
V(AVDD) Output voltage range 13.5 18 19 V
Output voltage range for max. 500h 19.8 V
High Voltage Stress Mode V(AVDD) positive offset 0 3 V
Switch overvoltage protection At SW pin, V(AVDD) rising 20.5 22.5 V
Output voltage tolerance At TJ = 0 ºC to 85 ºC 1%
Feedback input bias current 350 600 µA
rDS(on) MOSFET on-resistance I(SW) = current limit 100 200 mΩ
MOSFET current limit At TJ = 0 ºC to 85 ºC 4.25 5 5.75 A
MOSFET current limit negative offset 0 2.8 A
Line Regulation 8.6 V ≤ VI ≤ 14.7 V, IOUT = 500 mA 0.001 %/V
Load Regulation 1 mA ≤ IOUT ≤ 2 A 0.08 %/A
BUCK1 CONERTER (V(IO))
Switching frequency 600 750 900 kHz
V(IO) Output voltage range 2.2 3.3 3.7 V
Output voltage tolerance At TJ = 0 ºC to 85ºC 2%
I Feedback input bias current 10 200 µA
rDS(on) MOSFET on-resistance I(SWBK1) = current limit 200 300 mΩ
MOSFET current limit At TJ = 0 ºC to 85 ºC 2.8 3.5 4.2 A
Line Regulation 8.6 V ≤ VI ≤ 14.7 V, IOUT = 500 mA 0.002 %/V
Load Regulation 1 mA ≤ IOUT ≤ 2 A 0.07 %/A
BUCK2 CONVERTER (V(CORE))
Switching frequency 0.5 1 2 MHz
V(CORE) Output voltage range 0.8 1.2 3.3 V
Output voltage tolerance At TJ = 0 ºC to 85 ºC 2%
Feedback input bias current 20 200 µA
rDS(on) MOSFET on-resistance I(SWBK2) = current limit 175 300 mΩ
MOSFET current limit At TJ = 0 ºC to 85 ºC 2.5 3 3.5 A
Line Regulation 2.2 V ≤ VI ≤ 3.7 V, IOUT = 500 mA 0.001 %/V
Load Regulation 1 mA ≤ IOUT ≤ 1.5 A 0.2 %/A
BUCK3 CONVERTER (V(HAVDD))
Switching frequency 0.5 1 2 MHz
V(HAVDD) Output voltage range 4.8 9 11.1 V
Output Voltage Stress Mode V(HAVDD) positive offset 0 1.5 V
Output voltage tolerance At TJ = 0 ºC to 85 ºC 1.5%
Feedback input bias current 90 200 µA
rDS(on) MOSFET on-resistance I(SWBK3) = current limit 300 500 mΩ
MOSFET current limit At TJ = 0 ºC to 85 ºC 1.2 1.5 1.8 A
Line Regulation 8.6 V ≤ VI ≤ 14.7 V, IOUT = 500 mA 0.002 %/V
Load Regulation 1 mA ≤ IOUT ≤ 1 A 0.05 %/A
NEGATIVE CHARGE PUMP CONTROLLER (V(GL))
V(GL) Output voltage range –5.5 –10.3 –14.5 V
Output voltage tolerance At TJ = 0 ºC to 85 ºC 2.5%
Feedback input bias current 50 200 µA
I(DRVN) Max. DRVN drive current V(DRVN) = 0.6 V 5 10 mA
Resistor DRVN to GND 50 100 200 kΩ
Line Regulation 8.6 V ≤ VI ≤ 14.7 V, IOUT = 50 mA 0.015 %/V
Load Regulation 1 mA ≤ IOUT ≤ 100 mA 0.002 %/mA
POSITIVE CHARGE PUMP CONTROLLER (V(GH))
V(GH) Output voltage range 20 28 35 V
V(GH_offset) Temp. compensation V(GH) positive offset V(GH_offset) = 8 V 0 8 15 V
Max. output voltage including V(GH_offset) 40 V
Output voltage tolerance At TJ = 0 ºC to 85 ºC 2.5%
Feedback input bias current 120 200 µA
I(DRVP) Max. DRVP drive current V(DRVP) = 17 V 5 10 mA
Line Regulation 8.6 V ≤ VI ≤ 14.7 V, IOUT = 50 mA 0.001 %/V
Load Regulation 1 mA ≤ IOUT ≤ 100 mA 0.001 %/mA
GATE PULSE MODULATION (V(GHM))
Gate Pulse Modulation falling limit V(GHM) = 15 V 0 5 15 V
rDS(ON)M1 VGH to VGHM on-resistance CTRL = 3.3 V, I(VGHM) = 20 mA,
V(GH) = 28 V		 3 5 Ω
rDS(ON)M2 VGHM to RE on-resistance CTRL = GND, I(RE) = 20 mA, V(GHM) = 15 V 3 5 Ω
CTRL to VGHM propagation delay CTRL rising 150 250 360 ns

6.6 I2C Interface Timing Characteristics (1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSCL SCL clock frequency Standard mode 100 kHz
Fast mode 400 kHz
Fast mode plus 1 MHz
tLOW LOW period of the SCL clock Standard mode 4.7 µs
Fast mode 1.3 µs
tHIGH HIGH period of the SCL clock Standard mode 4.0 µs
Fast mode 600 ns
tBUF Bus free time between a STOP and START condition Standard mode 4.7 µs
Fast mode 1.3 µs
thd:STA Hold time for a repeated START condition Standard mode 4.0 µs
Fast mode 600 ns
tsu:STA Setup time for a repeated START condition Standard mode 4.7 µs
Fast mode 600 ns
tsu:STO Setup time for STOP condition Standard mode 4.0 µs
Fast mode 600 ns
thd:DAT Data hold time Standard mode 0 3.45 µs
Fast mode 0 0.9 µs
tsu:DAT Data setup time Standard mode 250 ns
Fast mode 100 ns
CB Capacitive load for SDA and SCL 400 pF
tRCL1 Rise time of SCL signal after a repeated START condition and after an acknowledge bit Standard mode 20 + 0.1CB 1000 ns
Fast mode 20 + 0.1CB 1000 ns
tRCL Rise time of SCL signal Standard mode 20 + 0.1CB 1000 ns
Fast mode 20 + 0.1CB 300 ns
tFCL Fall time of SCL signal Standard mode 20 + 0.1CB 300 ns
Fast mode 20 + 0.1CB 300 ns
tRDA Rise time of SDA signal Standard mode 20 + 0.1CB 1000 ns
Fast mode 20 + 0.1CB 300 ns
tFDA Fall time of SDA signal Standard mode 20 + 0.1CB 300 ns
Fast mode 20 + 0.1CB 300 ns
(1) Industry standard I2C timing characteristics. Not tested in production.

6.7 I2C Timing Diagram

TPS65177 TPS65177A fs_timing_lvs957.gif

6.8 Typical Characteristics

VI = 12 V unless otherwise noted.
TPS65177 TPS65177A D001_TPS65177.gif
Figure 1. V(AVDD) Boost Converter NMOS rDS(on)
TPS65177 TPS65177A D003_TPS65177.gif
Figure 3. V(IO) Buck 1 Converter NMOS rDS(on)
TPS65177 TPS65177A D005_TPS65177.gif
Figure 5. V(CORE) Buck 2 Converter PMOS rDS(on)
TPS65177 TPS65177A D007_TPS65177.gif
Figure 7. V(HAVDD) Buck 3 Converter PMOS rDS(on)
TPS65177 TPS65177A D009_TPS65177.gif
Figure 9. V(GL) charge-pump DRVN drive current
TPS65177 TPS65177A D002_TPS65177.gif
Figure 2. V(AVDD) Boost Converter PMOS rDS(on)
TPS65177 TPS65177A D004_TPS65177.gif
Figure 4. V(CORE) Buck 2 Converter NMOS rDS(on)
TPS65177 TPS65177A D006_TPS65177.gif
Figure 6. V(HAVDD) Buck 3 Converter NMOS rDS(on)
TPS65177 TPS65177A D008_TPS65177.gif
Figure 8. V(GH) charge-pump DRVP drive current