ZHCSI17B December   2008  – May 2018 TPS650250

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     详细方框图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Dissipation Ratings
    6. 6.6  Electrical Characteristics
    7. 6.7  Electrical Characteristics VDCDC1
    8. 6.8  Electrical Characteristics VDCDC2
    9. 6.9  Electrical Characteristics VDCDC3
    10. 6.10 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Step-Down Converters, VDCDC1, VDCDC2 AND VDCDC3
      2. 7.3.2 Power Save Mode Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 100% Duty Cycle Low Dropout Operation
      5. 7.3.5 Low Dropout Voltage Regulators
      6. 7.3.6 Undervoltage Lockout
      7. 7.3.7 PWRFAIL
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Configuration For The Samsung Processor S3C6400-533MHz
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Inductor Selection for the DCDC Converters
        2. 8.2.3.2 Output Capacitor Selection
        3. 8.2.3.3 Input Capacitor Selection
        4. 8.2.3.4 Output Voltage Selection
        5. 8.2.3.5 Voltage Change on VDCDC3
        6. 8.2.3.6 Vdd_alive Output
        7. 8.2.3.7 LDO1 and LDO2
        8. 8.2.3.8 Vcc-Filter
      4. 8.2.4 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics VDCDC1

VINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDCDC1 STEP-DOWN CONVERTER
VI Input voltage range,VINDCDC1 2.5 6 V
IO Maximum output current VO = 3.3V 1600 mA
ISD Shutdown supply current in VINDCDC1 EN_DCDC1 = GND 0.1 1 μA
RDS(on) P-channel MOSFET on-resistance VINDCDC1 = VGS = 3.6V 125 261 mΩ
ILP P-channel leakage current VINDCDC1 = 6V 2 μA
RDS(on) N-channel MOSFET on-resistance VINDCDC1 = VGS = 3.6V 130 260 mΩ
ILN N-channel leakage current VDS = 6V 7 10 μA
ILIMF Forward current limit (P- and N-channel) 2.5V < VINMAIN < 6V 1.75 1.97 2.15 A
fS Oscillator frequency 1.95 2.25 2.55 MHz
VDCDC1 Fixed output voltage MODE=0 (PWM/PFM) 2.8V VINDCDC1 = 3.3V to 6V;
0 mA ≤ IO ≤ 1.0A
–2% 2%
3.3V –2% 2%
Fixed output voltage MODE=1 (PWM) 2.8V VINDCDC1 = 3.7V to 6V;
0 mA ≤ IO ≤ 1.0A
–1% 1%
3.3V –1% 1%
Adjustable output voltage with resistor divider at DEFDCDC1 MODE = 0 (PWM/PFM) VINDCDC1 = VDCDC1 +0.4V (min 2.5V) to 6V; 0mA ≤ IO ≤ 1.6A –2% 2%
Adjustable output voltage with resistor divider at DEFDCDC1; MODE = 1 (PWM) VINDCDC1 = VDCDC1 +0.4V (min 2.5V) to 6V; 0mA ≤ IO ≤ 1.6A –1% 1%
Line regulation VINDCDC1 = VDCDC1 + 0.3V (min. 2.5 V) to 6V; IO = 10mA 0 %/V
Load regulation IO = 10mA to 1.6A 0.25 %/A
tSS Soft start ramp time VDCDC1 ramping from 5% to 95% of target value 750 μs
R(L1) Internal resistance from L1 to GND 1 MΩ