ZHCSF86A March 2016 – June 2016 TPD1E0B04
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical fast transient | IEC 61000-4-5 (5/50 ns) | 80 | A | |
Peak pulse | IEC 61000-4-5 power (tp - 8/20 µs) | 15 | W | |
IEC 61000-4-5 current (tp - 8/20 µs) | 1.7 | A | ||
TA | Operating free-air temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 155 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±8000 | V |
IEC 61000-4-2 air-gap discharge | ±9000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | –3.6 | 3.6 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD1E0B04 | UNIT | |
---|---|---|---|
DPL (X2SON) | |||
2 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 582 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 264.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 394.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 36.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 394.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO < 10 nA | –3.6 | 3.6 | V | |
VBRF | Breakdown voltage, IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.7 | V | ||
VBRR | Breakdown voltage, GND to IO pin | Measured as the maximum voltage before device snaps back into VHOLD voltage | –6.7 | V | ||
VHOLD | Holding voltage | IIO = 1 mA, TA = 25°C | 5 | 5.7 | 6.5 | V |
VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 7.2 | V | ||
IPP = 5 A, TLP, from IO to GND | 10.1 | |||||
IPP = 16 A, TLP, from IO to GND | 19 | |||||
IPP = 1 A, TLP, from GND to IO | 7.2 | |||||
IPP = 5 A, TLP, from GND to IO | 10.1 | |||||
IPP = 16 A, TLP, from GND to IO | 19 | |||||
ILEAK | Leakage current, IO to GND | VIO = ±2.5 V | 10 | nA | ||
RDYN | Dynamic resistance | IO to GND | 1 | Ω | ||
GND to IO | 1 | |||||
CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND TA = 25°C |
0.13 | 0.15 | pF |