SBOS507A February   2010  – December 2014 TLV3502-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Over-Voltage Protection
      2. 7.3.2 Relaxation Oscillator
      3. 7.3.3 High-Speed Window Comparator
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage 5.5 V
Signal input terminal voltage(2) (V−) − 0.3 (V+) + 0.3 V
Signal input terminal current(2) 10 mA
Output short-circuit current(3) 74 mA
Thermal impedance, junction to free air 200 200 °C/W
Operating temperature −40 125 °C
Junction temperature 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10mA or less.
(3) Short circuit to ground, one comparator per package

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±2000 V
Charged device model (CDM), per AEC Q100-011 Corner pins (+IN A, –IN B, V+, and V–) ±750
Other pins ±500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Supply voltage 2.2 2.7 5.5 V
VIL Low-level input voltage, shutdown (comparator is enabled)(2) (V+) - 1.7 V
VIH High-level input voltage, shutdown (comparator is disabled)(2) (V+) – 0.9 V
TA Operating temperature –40 125 °C
(1) Measured between 10% of VS and 90% of VS.
(2) When the shutdown pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

6.4 Thermal Information

THERMAL METRIC(1) TLV3502-Q1 UNIT
SOT-23
8 PINS
RθJA Junction-to-ambient thermal resistance 191.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.9
RθJB Junction-to-board thermal resistance 120.3
ψJT Junction-to-top characterization parameter 14.4
ψJB Junction-to-board characterization parameter 118.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 25°C and VS = 2.7 V to 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOS Input offset voltage(1) VCM = 0 V, IO = 0 mA ±1 ±6.5 mV
ΔVOS/ΔT Offset voltage vs temperature TA = –40°C to 125°C ±5 µV/°C
PSRR Offset voltage vs power supply VS = 2.7 V to 5.5 V 100 400 µV/V
Input hysteresis 6 mV
IB Input bias current VCM = VCC/2, ΔVIN = ±5.5 V ±2 ±10 pA
IOS Input offset current(2) VCM = VCC/2, ΔVIN = ±5.5 V ±2 ±10 pA
VCM Common-mode voltage range (V–) - 0.2 (V+) + 0.2 V
CMRR Common-mode rejection VCM = –0.2 V to (V+) + 0.2 V 57 70 dB
TA = −40°C to 125°C
VCM = –0.2 V to (V+) + 0.2 V		 55
Common-mode input impedance 1013 || 2 Ω || pF
Differential input impedance 1013 || 4 Ω || pF
VOH High-level voltage output from rail IOUT = ±1 mA 30 50 mV
VOL Low-level voltage output from rail IOUT = ±1 mA 30 50 mV
Input bias current of shutdown pin 2 pA
IQ Quiescent current per comparator VS = 5 V, VO = High 3.2 5 mA
IQ(SD) Quiescent current in shutdown 2 µA
(1) VOS is defined as the average of the positive and the negative switching thresholds.
(2) The difference between IB+ and IB−.

6.6 Switching Characteristics

TA = 25°C and VS = 2.7 V to 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tpd Propagation delay time(1)(3) ΔVIN = 100 mV, Overdrive = 20 mV 4.5 6.4 ns
TA = −40°C to 125°C
ΔVIN = 100 mV, Overdrive = 20 mV		 7 ns
ΔVIN = 100 mV, Overdrive = 5 mV 7.5 10 ns
TA = −40°C to 125°C
ΔVIN = 100 mV, Overdrive = 5 mV		 12 ns
Δt(SKEW) Propagation delay skew(2) ΔVIN = 100 mV, Overdrive = 20 mV 0.5 ns
fMAX Maximum toggle frequency Overdrive = 50 mV, VS = 5 V 80 MHz
tR Rise time(1) 1.5 ns
tF Fall time(1) 1.5 ns
tOFF Shutdown turn-off time 30 ns
tON Shutdown turn-on time 100 ns
(1) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by characterization at 100-mV overdrive.
(2) The difference between the propagation delay going high and the propagation delay going low.
(3) Not production tested

6.7 Typical Characteristics

TA = 25°C, VS = 5 V, Input Overdrive = 100 mV (unless otherwise noted)
g_outresp_rising_bos507.gif
Figure 1. Output Response for Various Overdrive Voltages (rising)
g_tpd_temp_vod20_bos507.gif
VOD = 20 mV
Figure 3. Propagation Delay vs Temperature
g_tpd_cl_vod20_bos507.gif
VOD = 20 mV
Figure 5. Propagation Delay vs Capacitive Load
g_tpd_vcc_bos507.gif
VDD = 5 V VIN = 20 mVpp
Figure 7. Propagation Delay vs Supply Voltage
g_resp_50mhz_sine_bos507.gif
VDD = 5 V VIN = 20 mVpp
Figure 9. Response to 50-MHz Sine Wave
g_iq_vcc_bos507.gif
Figure 11. Quiescent Current vs Supply Voltage
g_iq_vsd_bos507.gif
Figure 13. Quiescent Current vs Shutdown Voltage
g_outresp_fall_bos507.gif
Figure 2. Output Response for Various Overdrive Voltages (falling)
g_tpd_temp_vod50_bos507.gif
VOD = 50 mV
Figure 4. Propagation Delay vs Temperature
g_tpd_cl_vod50_bos507.gif
VOD = 50 mV
Figure 6. Propagation Delay vs Capacitive Load
g_twake_temp_bos507.gif
Figure 8. Wake-Up Delay vs Temperature
g_resp_100mhz_sine_bos507.gif
±2.5-V dual supply into 50-Ω oscilloscope input
Figure 10. Response to 100 MHz Sine Wave
g_iq_temp_bos507.gif
Figure 12. Quiescent Current vs Temperature
g_iq_freq_bos507.gif
Figure 14. Quiescent Current vs Frequency