ZHCSRU4F November   2006  – March 2023 SN65HVD3080E , SN65HVD3083E , SN65HVD3086E

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Power Dissipation Ratings
    3. 5.3  Electrostatic Discharge Protection
    4. 5.4  Supply Current
    5. 5.5  Recommended Operating Conditions
    6. 5.6  Thermal Information
    7. 5.7  Driver Electrical Characteristics
    8. 5.8  Driver Switching Characteristics
    9. 5.9  Receiver Electrical Characteristics
    10. 5.10 Receiver Switching Characteristics
    11. 5.11 Typical Characteristics
  6. Parameter Measurement Information
  7. Device Information
    1. 7.1 Function Tables
    2. 7.2 Equivalent Input and Output Schematic Diagrams
  8. Application Information
    1. 8.1 Hot-Plugging
  9. Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 商标
    4. 9.4 静电放电警告
    5. 9.5 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Driver Switching Characteristics

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH,
tPHL
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
HVD3080E RL = 54 Ω,
CL = 50 pF,
See Figure 6-4
0.7 1.3 μs
HVD3083E 150 500 ns
HVD3086E 12 20 ns
tr,
tf
Differential output signal rise time
Differential output signal fall time
HVD3080E 0.5 0.9 1.5 μs
HVD3083E 200 300 ns
HVD3086E 7 15 ns
tsk(p) Pulse skew (|tPHL – tPLH|) HVD3080E 20 200 ns
HVD3083E 5 50 ns
HVD3086E 1.4 5 ns
tPZH Propagation delay time,
high-impedance-to-high-level output
HVD3080E RL = 110 Ω,
RE at 0 V,
See Figure 6-5
2.5 7 μs
HVD3083E 1 2.5 μs
HVD3086E 13 30 ns
tPHZ Propagation delay time,
high-level-to-high-impedance output
HVD3080E 80 200 ns
HVD3083E 60 100 ns
HVD3086E 12 30 ns
tPZL Propagation delay time, high-impedance-to-low-level output HVD3080E RL = 110 Ω,
RE at 0 V,
See Figure 6-6
2.5 7 μs
HVD3083E 1 2.5 μs
HVD3086E 13 30 ns
tPLZ Propagation delay time, low-level-to-high-impedance output HVD3080E 80 200 ns
HVD3083E 60 100 ns
HVD3086E 12 30 ns
tPZH, Propagation delay time, standby-to-high-level output (See Figure 6-5) RL = 110 Ω, RE at 3 V 3.5 7 μs
tPZL Propagation delay time, standby-to-low-level output (See Figure 6-6)