ZHCSBS4F July   2013  – August 2014 SN65HVD01

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Dissipation Ratings
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Equivalent Input and Output Schematic Diagrams
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Bus Loading
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Performance Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from E Revision (March 2014) to F Revision

  • Changed Figure 22 image and CH3 scale from: 100 V/div To 2 V/divGo
  • Changed Figure 23 CH3 scale from: 100 V/div To 2 V/divGo

Changes from D Revision (November 2013) to E Revision

  • 已将数据表更改为全新的 TI 标准格式Go
  • 已添加器件信息表 Go
  • Added the Handling Ratings tableGo
  • Added the Detailed Description sectionGo
  • Changed Figure 17Go
  • Added the Applications and Implementation sectionGo
  • Deleted the Application Information sectionGo
  • Added the Power Supply RecommendationsGo
  • Added the Layout section Go

Changes from C Revision (November 2013) to D Revision

  • 已将特性从：小型 3mm x 3mm 超薄四方扁平无引线 (VQFN) 封装更改为：小型 3mm x 3mm 小外形尺寸无引线 (SON) 封装Go
  • 已将特性从：总线引脚保护：更改为：总线引脚保护大于Go
  • 已将特性从：≤ 15kV 更改为：±15kV HBM 保护Go
  • 已将特性从：≤ 15kV 更改为：±16kV 接触放电Go
  • 已将特性从：≤ 15kV 更改为：±16kV 空气放电Go
  • 已将说明文本从：3mm x 3mm，VQFN 封装更改为：3mm x 3mm，SON 封装Go
  • Changed the ABSOLUTE MAXIMUM RATINGS for IEC 61000-4-2 ESD (Air-Gap Discharge) From MAX = ±15 To: MAX = ±16Go
  • Changed the ABSOLUTE MAXIMUM RATINGS for IEC 61000-4-2 ESD (Contact Discharge) From MAX = ±15 To: MAX = ±16Go
  • Changed the Thermal Information table package From VQFN (DRC) To; SON (DRC)Go

Changes from B Revision (October 2013) to C Revision

  • Changed 从产品预览改为生产数据Go

Changes from A Revision (October 2013) to B Revision

  • Added 8 Typical Characteristics curvesGo

Changes from * Revision (July 2013) to A Revision

  • 已将特性从：针对数据和使能信号的 1.8V 至 3.3V 电源更改为：针对数据和使能信号的 1.65V 至 3.6V 电源Go
  • 已将特性从：针对总线信号的 3.3V 电源更改为：针对总线信号的 3V 至 3.6V 电源Go
  • 已将特性从：可选数据速率：250ksps 或 20Mbps 更改为：SLR 引脚可选数据速率：250ksps 或 20MbpsGo
  • 已更改应用范围列表Go
  • 已更改说明Go
  • 在典型应用电路中，已将：100Ω 电阻器更改为：120Ω 电阻器Go
  • Changed the ELECTRICAL CHARACTERISTICS table valuesGo
  • Changed the SWITCHING CHARACTERISTICS table valuesGo
  • Changed VCC and 3 V to VL in Figure 9 through Figure 16Go
  • Changed Figure 17Go