ZHCSQT8 October   2023 LM74930-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Charge Pump
      2. 7.3.2  Dual Gate Control (DGATE, HGATE)
        1. 7.3.2.1 Load Disconnect Switch Control (HGATE, OUT)
        2. 7.3.2.2 Reverse Battery Protection (A, C, DGATE)
      3. 7.3.3  Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
      4. 7.3.4  Overcurrent Protection with Circuit Breaker (ILIM, TMR)
      5. 7.3.5  Overcurrent Protection With Latch-Off
      6. 7.3.6  Short-Circuit Protection (ISCP)
        1. 7.3.6.1 Device Wake-Up With Output Short-Circuit Condition
      7. 7.3.7  Analog Current Monitor Output (IMON)
      8. 7.3.8  Overvoltage and Undervoltage Protection (OV, UVLO, OVCLAMP)
      9. 7.3.9  Disabling Reverse Current Blocking Functionality (MODE)
      10. 7.3.10 Device Functional Modes
        1. 7.3.10.1 Low Quiescent Current Shutdown Mode (EN)
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: 200-V Unsuppressed Load Dump Protection Application
      1. 8.2.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  VS Capacitance, Resistor R1 and Zener Clamp (DZ)
        2. 8.2.2.2  Charge Pump Capacitance VCAP
        3. 8.2.2.3  Input and Output Capacitance
        4. 8.2.2.4  Overvoltage and Undervoltage Protection Component Selection
        5. 8.2.2.5  Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        6. 8.2.2.6  Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        7. 8.2.2.7  Selection of Current Sense Resistor, RSNS
        8. 8.2.2.8  Hold-Up Capacitance
        9. 8.2.2.9  MOSFET Q1 Selection
        10. 8.2.2.10 MOSFET Q2 Selection
        11. 8.2.2.11 Input TVS Selection
      3. 8.2.3 Application Curves
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Transient Protection
      2. 8.4.2 TVS Selection for 12-V Battery Systems
      3. 8.4.3 TVS Selection for 24-V Battery Systems
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Mechanical, Packaging, and Orderable Information

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8.4.3 TVS Selection for 24-V Battery Systems

For 24-V battery protection application, the TVS and MOSFET in Figure 8-1 must be changed to meet 24-V battery requirements.

The breakdown voltage of the TVS+ must be higher than 48-V jump start voltage, less than the absolute maximum ratings of anode and enable pin of LM74930-Q1 (70 V) and must withstand 65-V suppressed load dump. The breakdown voltage of TVS- must be lower than maximum reverse battery voltage –32 V, so that the TVS- is not damaged due to long time exposure to reverse connected battery.

During ISO 7637-2 pulse 1, the input voltage goes up to –600 V with a generator impedance of 50 Ω. This translates to 12-A flowing through the TVS-. The clamping voltage of the TVS- cannot be same as that of 12-V battery protection circuit. Because during the ISO 7637-2 pulse, the Anode to Cathode voltage seen is equal to (- TVS Clamping voltage + Output capacitor voltage). For 24-V battery application, the maximum battery voltage is 32 V, then the clamping voltage of the TVS- must not exceed, 85 V – 32 V = 53 V.

Single bi-directional TVS cannot be used for 24-V battery protection because breakdown voltage for TVS+ ≥ 65V, maximum clamping voltage is ≤ 53 V and the clamping voltage cannot be less than the breakdown voltage. Two un-directional TVS connected back-back needs to be used at the input. For positive side TVS+, SMBJ58A with the breakdown voltage of 64.4 V (minimum), TI recommends 67.8 (typical). For the negative side TVS–, TI recommends SMBJ28A with breakdown voltage close to 32 V (to withstand maximum reverse battery voltage –32 V) and maximum clamping voltage of 42.1 V.

For 24-V battery protection, TI recommends a 75-V rated MOSFET to be used along with SMBJ28A and SMBJ58A connected back-back at the input.