ZHCSQ40C January   2023  – September 2023 LM2105

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 功能方框图
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Input Stages
      3. 7.3.3 Level Shift
      4. 7.3.4 Output Stages
      5. 7.3.5 SH Transient Voltages Below Ground
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and GVDD Capacitor
        2. 8.2.2.2 Select External Gate Driver Resistor
        3. 8.2.2.3 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

6.5 Electrical Characteristics

VGVDD = VBST = 12 V, GND = VSH = 0 V, No Load on GL or GH, TJ = 25°C (unless otherwise noted). 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IGVDD GVDD quiescent current VINL = VINH = 0 V 430 μA
IDDO GVDD operating current f = 50 kHz, CLOAD = 0 0.56 mA
IBST Total BST quiescent current VINL = VINH = 0 V, VDD = 12 V 130 μA
IBSTO Total BST operating current f = 50 kHz, CLOAD = 0 0.16 mA
IBSTS BST to GND quiescent current VSH = VBST = 95 V, GVDD = 12 V 33.3 μA
IBSTSO BST to GND operating current f = 50 kHz, CLOAD = 0 0.07 mA
INPUT
VHIT Input voltage high threshold -40°C to 125°C 1.45 2 V
VLIT Input voltage low threshold -40°C to 125°C 0.8 1.3 V
VIHYS Input voltage hysteresis 0.15 V
RIN Input pulldown resistance VIN = 3 V  200 kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VGVDDR GVDD rising threshold VGVDDR = VGVDD - GND, -40°C to 125°C 4.6 4.8 V
VGVDDF GVDD falling threshold VGVDDF = VGVDD - GND, -40°C to 125°C 4 4.3 V
VDDHYS GVDD threshold hysteresis 0.3 V
VBSTR VBST rising threshold VBSTR = VBST - VSH, -40°C to 125°C 4.25 4.7 V
VBSTF VBST falling threshold VBSTF = VBST - VSH, -40°C to 125°C 3.4 4 V
VBSTHYS VBST threshold hysteresis 0.25 V
BOOTSTRAP DIODE
VF Low-current forward voltage IBOOT = 100 uA 0.6 V
VFI High-current forward voltage IBOOT = 100 mA 2.1 V
RBOOT Bootstrap dynamic resistance IBOOT = 100 mA and 80 mA 12.5 Ω
GL GATE DRIVER
VGL_L Low level output voltage IGL = 100 mA, VGL_L = VGL – GND 0.25 V
VGL_H High level output voltage IGL = -100 mA, VGL_H = VGVDD – VGL 0.8 V
Peak pullup current(1) VGL = 0V 0.5 A
Peak pulldown current(1) VGL = 12V 0.8 A
GH GATE DRIVER
VGH_L Low level output voltage IGH = 100 mA, VGH_L = VGH – VSH 0.25 V
VGH_H High level output voltage IGH = –100 mA, VGH_H = VBST – VGH 0.8 V
Peak pullup current(1) VGH = 0V 0.5 A
Peak pulldown current(1) VGH = 12V 0.8 A
(1) Parameter not tested in production.