ZHCSDT0C june   2015  – may 2023 ISO5851

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Function
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Characteristics
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Supply and Active Miller Clamp
      2. 9.3.2 Active Output Pulldown
      3. 9.3.3 Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication Output
      4. 9.3.4 Fault ( FLT) and Reset ( RST)
      5. 9.3.5 Short Circuit Clamp
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Recommended ISO5851 Application Circuit
        2. 10.2.2.2  FLT and RDY Pin Circuitry
        3. 10.2.2.3  Driving the Control Inputs
        4. 10.2.2.4  Local Shutdown and Reset
        5. 10.2.2.5  Global-Shutdown and Reset
        6. 10.2.2.6  Auto-Reset
        7. 10.2.2.7  DESAT Pin Protection
        8. 10.2.2.8  DESAT Diode and DESAT Threshold
        9. 10.2.2.9  Determining the Maximum Available, Dynamic Output Power, POD-max
        10. 10.2.2.10 Example
        11. 10.2.2.11 Higher Output Current Using an External Current Buffer
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方产品免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  15. 14Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • DW|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.2.2.8 DESAT Diode and DESAT Threshold

The DESAT diode’s function is to conduct forward current, allowing sensing of the IGBT’s saturated collector-to-emitter voltage, V(CESAT), (when the IGBT is on) and to block high voltages (when the IGBT is off). During the short transition time when the IGBT is switching, there is commonly a high dVCE/dt voltage ramp rate across the IGBT. This results in a charging current I(CHARGE) = C(D-DESAT) x dVCE/dt, charging the blanking capacitor. C(D-DESAT) is the diode capacitance at DESAT.

To minimize this current and avoid false DESAT triggering, fast switching diodes with low capacitance are recommended. As the diode capacitance builds a voltage divider with the blanking capacitor, large collector voltage transients appear at DESAT attenuated by the ratio of 1+ C(BLANK) / C(D-DESAT).

Because the sum of the DESAT diode forward-voltage and the IGBT collector-emitter voltage make up the voltage at the DESAT-pin, VF + VCE = V(DESAT), the VCE level, which triggers a fault condition, can be modified by adding multiple DESAT diodes in series: VCE-FAULT(TH) = 9 V – n x VF (where n is the number of DESAT diodes).

When using two diodes instead of one, diodes with half the required maximum reverse-voltage rating may be chosen.