ZHCSU26A December   2023  – February 2024 ESDS552

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - JEDEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 接收文档更新通知
    3. 7.3 支持资源
    4. 7.4 商标
    5. 7.5 静电放电警告
    6. 7.6 术语表
  9. 8Revision History
  10. 9机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBZ|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO < 50nA-1212V
ILEAKAGELeakage current at VRWMVIO = ±12V1050nA
VBR

Breakdown voltage, IO to GND and GND to IO(1)

IIO = ±1mA13.2

18

V
VCLAMPSurge clamping voltage, tp = 8/20µs(2)IPP = 1A, I/O to GND19V
IPP = 1A, GND to I/O19V

IPP = 20A, I/O to GND

23.5V
IPP = 20A, GND to I/O23.5V

RDYN

8/20µs surge Dynamic Resistance

I/O to GND

0.4Ω

GND to I/O

0.38

CLine

Line capacitance, IO to GND

VIO = 0V, f = 1MHz

9.511pF
(1) VBR is defined as the voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback state
(1) Device stressed with 8/20µs exponential decay waveform according to IEC61000-4-5