ZHCSGQ9 September   2017 CSD87503Q3E

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     顶视图
    2.     电路图像
    3.     RDD(on) 与 VGS 之间的关系
  4. 4修订历史记录
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q3 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模板开口

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICMINTYPMAXUNIT
RθJC Junction-to-case thermal resistance(1) 8 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 60 °C/W
(1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

CSD87503Q3E 87503Q3E_Max.gif
 Max RθJA = 60°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD87503Q3E 87503Q3E_Min.gif
 Max RθJA = 185°C/W when mounted on a minimum pad area of
2-oz (0.071-mm) thick Cu.