ZHCSDN6C 数据表 | 德州仪器 TI.com.cn

ZHCSDN6C July 2014 – March 2024 CSD18536KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

	V_DS = 5 V

Figure 4-3 Transfer Characteristics

	V_DS = 50 V	I_D = 100 A

Figure 4-4 Gate Charge

	I_D = 250 µA

Figure 4-6 Threshold Voltage vs Temperature

	I_D = 100 A

Figure 4-8 Normalized On-State Resistance vs Temperature

	Single Pulse Max R_θJC = 0.4°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-12 Maximum Drain Current vs Temperature

Figure 4-5 Capacitance

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Single Pulse Unclamped Inductive Switching