ZHCSDN6C 数据表 | 德州仪器 TI.com.cn

ZHCSDN6C July 2014 – March 2024 CSD18536KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 48V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	1.4	1.8	2.2	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5V, I_D = 100A		1.7	2.2	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 100A		1.3	1.6	mΩ
g_fs	Transconductance	V_DS = 6V, I_D = 100A		312		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 30V, ƒ = 1MHz		8790	11430	pF
C_oss	Output Capacitance			1410	1840	pF
C_rss	Reverse Transfer Capacitance			39	51	pF
R_G	Series Gate Resistance			0.7	1.4	Ω
Q_g	Gate Charge Total (10V)	V_DS = 30V, I_D = 100A		108	140	nC
Q_gd	Gate Charge Gate-to-Drain			14		nC
Q_gs	Gate Charge Gate-to-Source			18		nC
Q_g(th)	Gate Charge at V_th			17		nC
Q_oss	Output Charge	V_DS = 30V, V_GS = 0V		230		nC
t_d(on)	Turn On Delay Time	V_DS = 30V, V_GS = 10 V, I_DS = 100A, R_G = 0Ω		11		ns
t_r	Rise Time			5		ns
t_d(off)	Turn Off Delay Time			24		ns
t_f	Fall Time			4		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 100A, V_GS = 0V		0.9	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		323		nC
t_rr	Reverse Recovery Time	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		86		ns