ZHCSGJ9A July 2017 – March 2024 CSD18511KCS
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0V, ID = 250μA | 40 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0V, VDS = 32V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0V, VGS = 20V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250μA | 1.5 | 1.8 | 2.4 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5V, ID = 100A | 3.2 | 4.2 | mΩ | ||
VGS = 10V, ID = 100A | 2.1 | 2.6 | |||||
gfs | Transconductance | VDS = 4V, ID = 100A | 249 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0V, VDS = 20V, ƒ = 1MHz | 4570 | 5940 | pF | ||
Coss | Output capacitance | 454 | 591 | pF | |||
Crss | Reverse transfer capacitance | 235 | 306 | pF | |||
RG | Series gate resistance | 0.9 | 1.8 | Ω | |||
Qg | Gate charge total (4.5V) | VDS = 20V, ID = 100A | 31 | nC | |||
Qg | Gate charge total (10V) | 64 | nC | ||||
Qgd | Gate charge gate-to-drain | 9.7 | nC | ||||
Qgs | Gate charge gate-to-source | 17.9 | nC | ||||
Qg(th) | Gate charge at Vth | 7.4 | nC | ||||
Qoss | Output charge | VDS = 20V, VGS = 0V | 20.7 | nC | |||
td(on) | Turnon delay time | VDS =
20V, VGS = 10V, IDS = 100A, RG = 0Ω | 8 | ns | |||
tr | Rise time | 6 | ns | ||||
td(off) | Turnoff delay time | 17 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 100A, VGS = 0V | 0.9 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDS=
20V, IF = 100A, di/dt = 300A/μs | 62 | nC | |||
trr | Reverse recovery time | 31 | ns |