ZHCSBA8F July   2013  – February 2022 CSD17483F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision E (April 2018) to Revision F (February 2022)

  • 将超薄型封装要点中的厚度从 0.35mm 更改为 0.36mmGo
  • 将超薄型封装图片中的厚度从 0.35mm 更新为 0.36mmGo
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

Changes from Revision D (Decermber 2016) to Revision E (April 2018)

  • Raised IDSS Test Condition VoltageGo
  • Raised IGSS Test Condition VoltageGo