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隔離式閘極驅動器

UCC21530

現行

Reinforced, 4A/6A dual-channel isolated gate driver w/ enable, programable dead time

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UCC21551 現行 Reinforced, 4A/6A dual-channel isolated gate driver w/ enable, programable dead time Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 700 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, Programmable dead time Output VCC/VDD (min) (V) 14.7 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 700 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Enable, Programmable dead time Output VCC/VDD (min) (V) 14.7 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • Safety-related certifications (planned):
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2022
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • Safety-related certifications (planned):
    • 8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5.7kVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2022

The UCC21530 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21530 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver With 3.3mm Channel-to-Channel Spacing datasheet (Rev. D) PDF | HTML 2024/11/8
證書 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026/7/15
證書 UL Certification E181974 Vol 4. Sec 7 (Rev. D) 2025/9/8
應用說明 Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024/1/25
證書 UCC215xx CQC Certificate of Product Certification PDF | HTML 2023/8/17
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16
證書 CSA Product Certificate (Rev. A) 2019/8/15
技術文章 Designing highly efficient, powerful and fast EV charging stations PDF | HTML 2019/8/6

設計與開發

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開發板

UCC21530EVM-286 — UCC21530 隔離式雙通道驅動器評估模組

UCC21530EVM-286 專為評估 UCC21530DWK 而設計，該裝置為隔離式雙通道柵極驅動器，具備 4A 源極與 6A 汲極峰值電流、12V UVLO、啟用（高電位作動）功能，以及通道間 3.3mm 沿面距離。此 EVM 可用作驅動電源系統中 IGBT 和 SiC MOSFET 的參考設計。
使用指南: PDF | HTML
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模擬型號

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice 模型
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參考設計

TIDA-00366 — 具有電流、電壓和溫度保護功能的強化型隔離式三相逆變器參考設計

此參考設計提供額定值高達 10kW 的三相逆變器，採用強化型隔離式閘極驅動器 UCC21530、強化型隔離式放大器 AMC1301 和 AMC1311 以及 MCU TMS320F28027 進行設計。使用 AMC1301 測量與 MCU 內部 ADC 介接的馬達電流，以及使用自舉式電源供應器為 IGBT 閘極驅動器供電，即可降低系統成本。此逆變器旨在為過載、短路、接地故障、DC 匯流排欠電壓與過電壓，以及 IGBT 模組過熱提供保護。

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參考設計

TIDA-010054 — 適合於 Level 3 電動車充電站的雙向有源電橋參考設計

此參考設計提供單相雙主動橋式 (DAB) DC/DC 轉換器實作概覽。DAB 拓撲結構提供軟切換通訊、減少裝置數量與高效率等優勢。此設計的優勢在於功率密度、成本、重量、電隔離、高電壓轉換比與可靠性，這些都是關鍵要素，因此非常適合應用於 EV 充電站和儲能。DAB 中的模組化與對稱架構可堆疊轉換器，達到高功率傳輸速率，並有利於雙向運作模式來支援電池充電與放電應用。
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