LMG3650R025
- 650V 25mΩ GaN power FET with integrated gate driver
- >200V/ns FET hold-off
- Adjustable slew rates for optimization of switching performance and EMI mitigation
- 10V/ns to 80V/ns turn-on slew rates
- 10V/ns to full speed turn-off slew rates
- Operates with supply pin and input logic pin voltage range from 9V to 26V
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
- Withstands 720V surge
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- LMG3656R025 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
- LMG3657R025 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
- 9.8mm × 11.6mm TOLL package with thermal pad
The LMG365xR025 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate varies from 10V/ns to 80V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, and short-circuit and overtemperature protection. The LMG3651R025 provides a 5V LDO output on LDO5V pin that powers external digital isolators. The LMG3656R025 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R025 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LMG365xR025 650V 25 mΩ GaN FET With Integrated Driver and Protection datasheet (Rev. A) | PDF | HTML | 2025年 12月 10日 |
設計與開發
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LMG3650EVM-113 — LMG3650R025 子卡
LMG3650R025 評估模組 (EVM) 配置 LMG3650R025 GaN FET 以形成半橋結構，具備過熱保護、逐週期過電流保護、鎖存短路去衛星保護功能，以及測試隔離式偏壓電源或靴帶式電源所有必要的輔助週邊電路。此 EVM 設計旨在與較大的系統配合使用。
LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ 半橋子板
TIDA-010282 — 1.3kW GaN 圖騰柱功率因數校正和馬達逆變器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| TO-OTHER (KLA) | 9 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。