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LMG3612

現行

具有整合式驅動器和防護功能的 650V 120mΩ GaN FET

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² (8 mm × 5.3 mm)
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG3612650-V120-mΩ GaN FET With Integrated Driver datasheet PDF | HTML 2023/11/14
技術文章 The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 2024/1/30
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 2023/11/28

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG3622EVM-082 — 適用於具 USB Type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3622 評估模組

LMG3622EVM-082 使用具備整合電流感測模擬功能與 GaN FET 的 LMG3622,展示 65-W USB Type-C® 電力傳輸 (PD) 離線轉接器的高效率和高密度。  輸入支援通用 90VAC 至 265VAC,單輸出在最大電流 3-A 時可設爲 5V、9V 和 15V,最大電流 3.25-A 時則為 20V,可透過 USB PD 介面控制器進行調整。  高達 200-kHz 額定值的高頻運作,可實現較小的解決方案尺寸,同時多模式運作可保持高效率。  輸出則採用同步整流以提升效率。

使用指南: PDF | HTML
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計算工具

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
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參考設計

PMP23488 — 540W 平面電視電源參考設計

本參考設計提供高度限制在 10mm 以內的平面電視電源設計資訊。本設計採用交錯式過渡模式 (TM) 功因修正 (PFC) 電路,並搭配兩塊可更換且基於平面變壓器設計的獨立 LLC 諧振子板。本參考設計的典型輸出功率為 300W,峰值輸出功率可達 540W。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (REQ) 38 Ultra Librarian

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