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半橋式驅動器

LMG1210

現行

適用 GaNFET 和 MOSFET 的 1.5-A、3-A、200-V 半橋閘極驅動器、5-V UVLO 和可編程失效時間

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產品規格表

LMG1210

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Bootstrap supply voltage clamp, Dead time control, Internal LDO, Resistor-controllable deadtime Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 300 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 6 Input supply voltage (max) (V) 18 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.01 Rise time (ns) 0.5 Fall time (ns) 0.5 Iq (mA) 0.3 Input threshold TTL Channel input logic TTL/PWM Features Bootstrap supply voltage clamp, Dead time control, Internal LDO, Resistor-controllable deadtime Driver configuration Half bridge
WQFN (RVR) 19 12 mm² (4 mm × 3 mm)
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
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LMG1205 現行 適用於 GaNFET 和 MOSFET 且具有 5-V UVLO 的 1.2-A、5-A 90-V、半橋閘極驅動器 This device offers a smaller package with similar functionality.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. D) PDF | HTML 2019/2/7
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits PDF | HTML 2023/11/15
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
Application brief GaN Applications PDF | HTML 2022/8/10
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 2022/8/10
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022/8/4
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022/8/4
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022/8/2
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
應用說明 How to Optimize RF Amplifier Performance Using LMG1210 2019/10/3
應用說明 GaN Gate Driver Layout Help 2019/5/23
Application brief Achieve Cooler Thermals and Loss of your GaN Half-Bridge with the LMG1210 2019/5/23
應用說明 Get the Most Power from a Half-bridge with High-Frequency Controllable Precision 2018/12/5
應用說明 Optimizing efficiency through dead time control with the LMG1210 GaN driver (Rev. A) 2018/11/27
白皮書 Optimizing multi-megahertz GaN driver design white paper (Rev. A) 2018/11/27
技術文章 The sound of GaN PDF | HTML 2018/6/26
技術文章 GaN drivers – switching faster than today’s technology PDF | HTML 2018/3/5
白皮書 A comprehensive methodology to qualify the reliability of GaN products 2015/3/2

設計與開發

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開發板

LMG1210EVM-012 — LMG1210 半橋開迴路評估模組

LMG1210EVM-012 旨在用於評估適用於 GaN FET 的 LMG1210 百萬赫級 200V 半橋式驅動器。此 EVM 包含兩個配置在同一半橋中的氮化鎵 FET，這兩個 FET 由單一 LMG1210 驅動。此板上無控制器。
使用指南: PDF
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模擬型號

LMG1210 PSpice Transient Model (Rev. C)

SNOM615C.ZIP (22427 KB) - PSpice 模型
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模擬型號

LMG1210 TINA-TI Reference Design (Rev. C)

SNOM617C.TSC (610 KB) - TINA-TI 參考設計
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模擬型號

LMG1210 Unencrypted PSPICE Transient Model

SNOM677.ZIP (7 KB) - PSpice 模型
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計算工具

SNOR035 — LMG1210 Component Design Calculator and Schematic Review

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參考設計

PMP21440 — 比較：0.8V/8W GaN 與矽片電源供應參考設計

此參考設計為客戶提供在電源供應設計中使用 GaN 與 SI 的比較研究。此特定設計採用 TPS40400 控制器來驅動矽片電源供應的 CSD87381，以及 GaN 電源供應的 LMG1210 與 EPC2111，以提供 0.8V/10A。此設計會比較矽與 GaN 功率級，並說明使用 GaN 設計時，在設計上的取捨與必要最佳化。
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參考設計

PMP22951 — 具有主動鉗位的 54-V、3-kW 相移式全橋參考設計

參考設計為 GaN 式 3-kW 相移式全橋 (PSFB) 轉換器。此設計二次側使用主動箝位，可減少同步整流器 (SR) MOSFET 的電壓應力，使用擁有更出色品質因數 (FoM) 的低電壓額定值 MOSFET。PMP22951 在一次側使用 30-mΩ GaN，以及針對同步整流器使用 100-V、1.8-mΩ GaN。利用 TMS320F280049C 即時微控制實現 PSFB 控制。PSFB 轉換器可在 140-kHz 切換頻率下運作，並在 385-V 輸入下達到 97.45% 的峰值效率。
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參考設計

TIDA-01634 — 適用於高速 DC/DC 轉換器的多 MHz GaN 功率級參考設計

此參考設計以 LMG1210 半橋 GaN 驅動器和 GaN 功率級高電子移動率電晶體 (HEMT) 為基礎，採用多 MHz 功率級設計。透過高效率開關和靈活的失效時間調整，此設計可大幅提升功率密度，同時實現良好效率及高控制頻寬。此功率級設計可廣泛應用於眾多需要快速回應的空間受限型應用，如 5G 電信電源、伺服器和工業電源供應器。
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
WQFN (RVR) 19 Ultra Librarian
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